Ubwiza bwiza bwa Silicon Carbide RBSIC / SISIC Cantilever Paddle Yifashishwa munganda zizuba za Solar Photovoltaic

Ibisobanuro bigufi:

Ibyiza byihariye bya SiC-yashushanyijeho grafite suseptors zirimo ubuziranenge buhebuje cyane, gutwikira abantu hamwe nubuzima bwiza bwa serivisi. Bafite kandi imiti myinshi irwanya imiti hamwe nubushyuhe bwumuriro.

Turakomeza kwihanganira hafi mugihe dushyira hejuru ya SiC, dukoresheje imashini zisobanutse neza kugirango tumenye umwirondoro umwe. Dutanga kandi ibikoresho bifite ibikoresho byiza byo kurwanya amashanyarazi kugirango bikoreshwe muri sisitemu ishyushye. Ibice byose byarangiye bizana ubuziranenge nicyemezo cyo kubahiriza.

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Ibicuruzwa birambuye

Ibicuruzwa

Ibikoresho bikoreshwa neza, abahanga bunguka abakozi, nibindi byiza nyuma yo kugurisha ibicuruzwa na serivisi; Twabaye kandi umwe mubashakanye bakomeye hamwe nabana, umuntu wese akomera kumasosiyete yunguka "ubumwe, ubwitange, kwihanganira" kubwiza bwiza bwa Silicon Carbide RBSIC / SISIC Cantilever Paddle Yifashishwa munganda zizuba za Solar Photovoltaic, Twakiriye byimazeyo abanyamahanga bombi ndetse n’imbere mu gihugu abashoramari b'ubucuruzi, kandi twizeye gukorana nawe mugihe kirekire!
Ibikoresho bikoreshwa neza, abahanga bunguka abakozi, nibindi byiza nyuma yo kugurisha ibicuruzwa na serivisi; Twabaye kandi abo twashakanye hamwe nabana, abantu bose bakomera kumuryango bunguka "ubumwe, ubwitange, kwihanganira" kuriUbushinwa Refractory ceramic na ceramic itanura, Kugira ngo wuzuze ibisabwa byabakiriya runaka kubantu kuri serivisi nziza kandi nibintu byiza bihamye. Twishimiye cyane abakiriya kwisi yose kudusura, hamwe nubufatanye bwacu butandukanye, kandi tugafatanya guteza imbere amasoko mashya, tugashiraho ejo hazaza heza!

SiC gutwikira / gutwikiriye Graphite substrate ya Semiconductor

Susceptors ifata kandi igashyushya wafer ya semiconductor mugihe cyo gutunganya ubushyuhe. Susceptor ikozwe mubintu bikurura ingufu mukwinjiza, gutwara, cyangwa / cyangwa imirasire kandi bigashyushya wafer. Kurwanya ihungabana ryumuriro, ubushyuhe bwumuriro, nubuziranenge nibyingenzi mugutunganya ubushyuhe bwihuse (RTP). Carbide ya silicon yometse kuri grafite, karubone ya silicon (SiC), na silikoni (Si) ikoreshwa muburyo bworoshye bitewe nubushyuhe bwihariye nubushyuhe. PureSiC® CVD SiC na ClearCarbon material ibikoresho byera cyane bitanga ubushyuhe bwumuriro mwinshi, birwanya ruswa, kandi biramba.

Ibisobanuro ku bicuruzwa

SiC itwikiriye Graphite substrate ya porogaramu ya Semiconductor itanga igice gifite isuku irenze kandi irwanya umwuka wa okiside.
CVD SiC cyangwa CVI SiC ikoreshwa kuri Graphite yibice byoroshye cyangwa bigoye. Ipitingi irashobora gukoreshwa mubwinshi butandukanye no mubice binini cyane.

SiC gutwikira / gutwikiriye Graphite substrate ya Semiconductor

Ubukorikori bwa tekiniki ni amahitamo asanzwe ya progaramu yo gutunganya amashyuza ya semiconductor harimo RTP (Rapid Thermal Processing), Epi (Epitaxial), gukwirakwiza, okiside, hamwe na annealing. CoorsTek itanga ibikoresho bigezweho byabugenewe kugirango bihangane nubushyuhe bwumuriro hamwe nubuziranenge bwinshi, bukomeye, busubirwamo kubushyuhe bwo hejuru

Ibiranga:
· Kurwanya Ubushuhe buhebuje
· Kurwanya umubiri mwiza cyane
· Kurwanya imiti nziza cyane
· Ubuziranenge buhebuje
· Kuboneka muburyo bugoye
· Irakoreshwa munsi ya Oxidizing Atmosphere

Porogaramu ：

Wafer ikeneye kunyura munzira nyinshi mbere yuko yitegura gukoreshwa mubikoresho bya elegitoroniki. Inzira imwe yingenzi ni silicon epitaxy, aho wafers ikorerwa kuri susite ya grafite. Imiterere nubwiza bwa susceptors bigira ingaruka zikomeye kumiterere ya epitaxial ya wafer.

Ibintu bisanzwe bya Base Graphite Ibikoresho:

Ubucucike bugaragara:	1,85 g / cm3
Kurwanya amashanyarazi:	11 μΩm
Icyerekezo cyoroshye:	49 MPa (500kgf / cm2)
Gukomera ku nkombe:	58
Ivu:	<5ppm
Amashanyarazi:	116 W / mK (100 kcal / mhr- ℃)