vet-china itangiza leta-yubuhanga-bwa-bwato bwa Wafer Ubwato bwakorewe ibisekuruza bizaza byo gukora semiconductor. Ubu bwato bwateguwe neza butanga ibisobanuro bitagereranywa mugutunganya wafer, kwemeza imikorere idahwitse kandi bigabanya cyane ibyago byo kwangirika mugihe cyo gutunganya.
Yubatswe hamwe nibikoresho byujuje ubuziranenge, Ubwato bwa Wafer Ubwato bufite ubwiza buhebuje bw’umuriro hamwe n’imiti idasanzwe y’imiti, bigatuma biba byiza ku bushyuhe bwo hejuru kandi bw’ibidukikije bikabije. Igishushanyo cyacyo gishya cyemeza ko wafers ifashwe neza kandi igahuzwa neza, igahindura ibicuruzwa byongera umusaruro.
Ubu bwato bugezweho bwa wafer bwateguwe kugirango buhuze ibyifuzo bya fabs bigezweho, bifasha ubunini bwa wafer nuburyo bugaragara. Mugushyiramo ubwato bwa Wafer buva muri vet-china mumurongo wawe wibyara umusaruro, urashobora kwitega imikorere myiza, kugabanya igihe, no kongera umusaruro.
Inararibonye itandukaniro hamwe na vet-china yiyemeje ubuziranenge no guhanga udushya, gutanga ibicuruzwa bisunika imipaka yinganda zikora. Hitamo ubwato bwa Wafer hanyuma uzamure ubushobozi bwawe bwo gutunganya wafer kugera ahirengeye.
Ibyiza bya karubide ya silicon yongeye gushyirwaho
Carbide ya silicon yongeye gushyirwaho (R-SiC) ni ibikoresho bikora cyane hamwe n'ubukomezi bwa kabiri nyuma ya diyama, ikorwa ku bushyuhe buri hejuru ya 2000 ℃. Igumana ibintu byinshi byiza bya SiC, nkimbaraga zubushyuhe bwo hejuru, kurwanya ruswa ikomeye, kurwanya okiside nziza, kurwanya ubushyuhe bwumuriro nibindi.
Properties Ibikoresho byiza bya mashini. Carbide yongeye gushyirwaho karbide ifite imbaraga nubukomezi kurenza fibre ya karubone, irwanya ingaruka nyinshi, irashobora gukina imikorere myiza mubushuhe bukabije, irashobora gukina imikorere iringaniza mubihe bitandukanye. Mubyongeyeho, ifite kandi ihinduka ryiza kandi ntabwo yangiritse byoroshye kurambura no kunama, bitezimbere cyane imikorere yayo.
Resist Kurwanya ruswa. Carbide ya silicon yongeye gushyirwaho ifite imbaraga nyinshi zo kurwanya ruswa yibitangazamakuru bitandukanye, irashobora gukumira isuri yibitangazamakuru bitandukanye byangirika, irashobora kugumana imiterere yubukanishi igihe kirekire, ifatanye cyane, kuburyo ifite ubuzima burebure. Mubyongeyeho, ifite kandi ituze ryiza ryumuriro, irashobora guhuza nurwego runaka rwimihindagurikire yubushyuhe, kunoza imikorere yayo.
Sin Sinteri ntigabanuka. Kuberako inzira yo gucumura itagabanuka, ntagahato gasigaye kazatera guhindagurika cyangwa gucika kubicuruzwa, kandi ibice bifite imiterere igoye kandi byuzuye birashobora gutegurwa.
| 重结晶碳化硅物理特性 Ibintu bifatika bya Silicon Carbide yongeye gushyirwaho | |
| 性质 / Umutungo | 典型数值 / Agaciro gasanzwe |
| 使用温度/ Ubushyuhe bwo gukora (° C) | 1600 ° C (hamwe na ogisijeni), 1700 ° C (kugabanya ibidukikije) |
| SiC含量/ Ibirimo | > 99,96% |
| 自由Si 含量/ Ibirimo Si kubuntu | <0.1% |
| 体积密度/Ubucucike bwinshi | 2.60-2.70 g / cm3 |
| 气孔率/ Ikigaragara | <16% |
| 抗压强度/ Imbaraga zo kwikuramo | > 600MPa |
| 常温抗弯强度/Imbaraga zikonje | 80-90 MPa (20 ° C) |
| 高温抗弯强度Imbaraga zunamye | 90-100 MPa (1400 ° C) |
| 热膨胀系数/ Kwiyongera k'ubushyuhe @ 1500 ° C. | 4.70 10-6/ ° C. |
| 导热系数/Ubushyuhe bwumuriro @ 1200 ° C. | 23W / m • K. |
| 杨氏模量/ Modulus | 240 GPa |
| 抗热震性/ Kurwanya inkuba | Nibyiza cyane |
Ingufu za VET ni iuruganda nyarwo rukora ibicuruzwa bya grafite na silicon karbide hamwe na CVD,irashobora gutangazitandukanyeibice byabigenewe bya semiconductor ninganda zifotora. Our tekinike tekinike iva mubigo byubushakashatsi byo murugo, birashobora gutanga ibisubizo byumwuga byinshikuri wewe.
Dukomeje guteza imbere inzira ziterambere kugirango dutange ibikoresho byateye imbere,nabakoze ikoranabuhanga ryemewe ryemewe, rishobora gutuma isano iri hagati yikingirizo hamwe na substrate ikomera kandi ntibikunze gutandukana.
| CVD SiC薄膜基本物理性能 Ibyingenzi bifatika bya CVD SiCgutwikira | |
| 性质 / Umutungo | 典型数值 / Agaciro gasanzwe |
| 晶体结构 / Imiterere ya Crystal | FCC β icyiciro多晶，主要为（111 ）取向 |
| 密度 Ubucucike | 3.21 g / cm³ |
| 硬度 / Gukomera | 2500 维氏硬度（ 500g umutwaro） |
| 晶粒大小 / Ibinyampeke SiZe | 2 ~ 10 mm |
| 纯度 / Ubuziranenge bwa Shimi | 99.99995% |
| 热容 / Ubushyuhe | 640 J · kg-1· K.-1 |
| 升华温度 / Ubushyuhe bwo hejuru | 2700 ℃ |
| 抗弯强度 / Imbaraga zoroshye | 415 MPa RT amanota 4 |
| 杨氏模量 / Modulus | 430 Gpa 4pt yunamye, 1300 ℃ |
| 导热系数 / ThermalImyitwarire | 300W · m-1· K.-1 |
| 热膨胀系数 Kwagura Ubushyuhe (CTE) | 4.5 × 10-6K-1 |
Murakaza neza cyane gusura uruganda rwacu, reka tuganire kubindi biganiro!
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