gallium arsenide-fosifide epitaxial

Ibisobanuro bigufi:

Gallium arsenide-fosifike epitaxial yubatswe, isa nuburyo bwakozwe muburyo bwa substrate ubwoko bwa ASP (ET0.032.512TU), kuri. gukora planar itukura LED.

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Ibicuruzwa

Gallium arsenide-fosifike epitaxial yubatswe, isa nuburyo bwakozwe muburyo bwa substrate ubwoko bwa ASP (ET0.032.512TU), kuri. gukora planar itukura LED.

Ibikoresho by'ibanze bya tekiniki
kuri gallium arsenide-fosifike

1, SubstrateGaAs
a. Ubwoko bw'imyitwarire	ibikoresho bya elegitoroniki
b. Kurwanya, ohm-cm	0,008
c. Crystal-latticeorientation	(100)
d. Kugaragara nabi	(1−3) °

2. Igice cya Epitaxial GaAs1-х Pх
a. Ubwoko bw'imyitwarire	ibikoresho bya elegitoroniki
b. Ibirimo bya fosifore murwego rwinzibacyuho	kuva х = 0 kugeza х ≈ 0,4
c. Ibirimo bya fosifore murwego rwo guhora uhimba	х ≈ 0,4
d. Ubwikorezi bwabatwara, сm3	(0,2−3,0) · 1017
e. Uburebure bwumurongo ntarengwa wa Photoluminescence, nm	645−673 nm
f. Uburebure bwumurongo ntarengwa wa electroluminescence	650−675 nm
g. Umubyimba uhoraho, micron	Nibura 8 nm
h. Inzira (yose), micron	Nibura 30 nm

3 Isahani hamwe na epitaxial layer
a. Gutandukana, micron	Hafi 100 um
b. Umubyimba, micron	360−600 um
c. Squarecentimetre	Nibura cm 6
d. Imbaraga zidasanzwe (nyuma yo gukwirakwizaZn), cd / amp	Nibura 0,05 cd / amp