Triangular defect
Triangular defects are the most fatal morphological defects in SiC epitaxial layers. A large number of literature reports have shown that the formation of triangular defects is...
Silicon carbide (SiC) is a new compound semiconductor material. Silicon carbide has a large band gap (about 3 times silicon), high critical field strength (about 10 times silicon), high thermal con...
The technical difficulties in stably mass-producing high-quality silicon carbide wafers with stable performance include:
1) Since crystals need to grow in a high-temperature sealed environment a...
Some organic and inorganic substances are required to participate in semiconductor manufacturing. In addition, since the process is always carried out in a clean room with human participation, semi...
In this report, the global carbon mold market value in 2019 is XX million U.S. dollars and is expected to reach XX million U.S. dollars by the end of 2025, with a compound annual growth rate of XX%...