1. SiC crystal growth technology route
PVT (sublimation method),
HTCVD (high temperature CVD),
LPE (liquid phase method)
are three common SiC crystal growth methods;
The most recognized meth...
Chemical vapor deposition (CVD) refers to the process of depositing a solid film on the surface of a silicon wafer through a chemical reaction of a gas mixture. According to the different reaction ...
CVD silicon carbide coating has broad application prospects in the field of electronic devices. CVD silicon carbide coating has excellent mechanical, thermal and electrical properties, so it can be...
Graphite rod for non-metallic products, as a carbon arc gouging cutting process in a necessary pre-welding cutting consumables, is made of carbon, graphite plus appropriate adhesive, through extrus...
Triangular defect
Triangular defects are the most fatal morphological defects in SiC epitaxial layers. A large number of literature reports have shown that the formation of triangular defects is...
In a certain packaging process, packaging materials with different thermal expansion coefficients are used. During the packaging process, the wafer is placed on the packaging substrate, and then he...