Silicon Carbide (SiC) Epitaxial Wafer

Kufotokozera Kwachidule:

Silicon Carbide (SiC) Epitaxial Wafer yochokera ku VET Energy ndi gawo laling'ono logwira ntchito kwambiri lopangidwa kuti likwaniritse zofunikira zamagetsi am'badwo wotsatira ndi zida za RF. VET Energy imawonetsetsa kuti chowotcha chilichonse cha epitaxial chimapangidwa mwaluso kuti chipereke matenthedwe apamwamba kwambiri, magetsi owonongeka, komanso kuyenda kwa chonyamulira, zomwe zimapangitsa kuti zikhale zoyenera kugwiritsa ntchito monga magalimoto amagetsi, kulumikizana kwa 5G, ndi zamagetsi zamagetsi zamagetsi zamagetsi.

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Tsatanetsatane wa Zamalonda

Zolemba Zamalonda

VET Energy silicon carbide (SiC) epitaxial wafer ndi mawonekedwe apamwamba kwambiri a bandgap semiconductor okhala ndi kukana kutentha kwambiri, ma frequency apamwamba komanso mawonekedwe amphamvu kwambiri. Ndi gawo lapansi labwino la m'badwo watsopano wa zida zamagetsi zamagetsi. VET Energy imagwiritsa ntchito ukadaulo wapamwamba wa MOCVD epitaxial kuti ikule zigawo zapamwamba za SiC epitaxial pagawo la SiC, kuwonetsetsa kuti chophatikiziracho chimagwira ntchito bwino komanso chimagwirizana.

Silicon Carbide (SiC) Epitaxial Wafer yathu ya Silicon Carbide (SiC) Epitaxial Wafer imapereka kuyanjana kwabwino kwambiri ndi zida zosiyanasiyana za semiconductor kuphatikiza Si Wafer, SiC Substrate, SOI Wafer, ndi SiN Substrate. Ndi epitaxial layer yake yolimba, imathandizira njira zapamwamba monga kukula kwa Epi Wafer ndi kuphatikiza ndi zinthu monga Gallium Oxide Ga2O3 ndi AlN Wafer, kuwonetsetsa kugwiritsidwa ntchito kosunthika pamaukadaulo osiyanasiyana. Zapangidwa kuti zigwirizane ndi makina ogwiritsira ntchito ma Cassette, amaonetsetsa kuti ntchito zake zikuyenda bwino komanso zosinthika m'malo opangira semiconductor.

Mzere wazogulitsa wa VET Energy sungokhala ma SiC epitaxial wafers. Timaperekanso zida zingapo za semiconductor gawo lapansi, kuphatikiza Si Wafer, SiC Substrate, SOI Wafer, SiN Substrate, Epi Wafer, ndi zina zotero. Kuphatikiza apo, tikupanganso zida zatsopano za semiconductor, monga Gallium Oxide Ga2O3 ndi AlN. Wafer, kuti akwaniritse zofuna zamakampani amagetsi amagetsi amtsogolo pazida zogwira ntchito kwambiri.

ZINTHU ZONSE

*n-Pm=n-type Pm-Grade,n-Ps=n-type Ps-Grade,Sl=Semi-lnsulating

Kanthu	8-inchi	6-inchi			4-inchi
Kanthu	nP	n-pm	n-Zam	SI	SI
TTV(GBIR)	≤6um	≤6um
Bow(GF3YFCD) -Mtheradi Wamtengo Wapatali	≤15μm	≤15μm	≤25μm		≤15μm
Warp(GF3YFER)	≤25μm	≤25μm	≤40μm		≤25μm
LTV(SBIR) -10mmx10mm	<2 mu
Wafer Edge	Beveling

PAMENE MALIZA

*n-Pm=n-type Pm-Grade,n-Ps=n-type Ps-Grade,Sl=Semi-lnsulating

Kanthu	8-inchi	6-inchi			4-inchi
	nP	n-pm	n-Zam	SI	SI
Pamwamba Pamwamba	Mbali ziwiri za Optical Polish, Si- Face CMP
SurfaceRoughness	(10um x 10um) Si-FaceRa≤0.2nm C-Face Ra≤ 0.5nm			(5umx5um) Si-Face Ra≤0.2nm C-Face Ra≤0.5nm
Chips za Edge	Palibe Chololedwa (kutalika ndi m'lifupi ≥0.5mm)
Inde	Palibe Chololedwa
Zikwapu (Si-Face)	Unyinji.≤5, Zowonjezera Utali≤0.5× wafer awiri	Unyinji.≤5, Zowonjezera Utali≤0.5× wafer awiri			Unyinji.≤5, Zowonjezera Utali≤0.5× wafer awiri
Ming'alu	Palibe Chololedwa
Kupatula M'mphepete	3 mm