SiC wokutira wokutira waGawo la graphite la Semiconductor, zokutira za silicon carbide,Pulogalamu ya MOCVD,
Gawo la graphite, Gawo la graphite la Semiconductor, Pulogalamu ya MOCVD, Silicon Carbide Coating,
Ubwino wapadera wa zoyezera ma graphite zokutira za SiC zimaphatikizapo kuyera kwambiri, zokutira zofananira komanso moyo wabwino kwambiri wantchito. Amakhalanso ndi kukana kwamphamvu kwamankhwala komanso kukhazikika kwamafuta.
Kupaka kwa SiCGawo la graphite la Semiconductorntchito zimapanga gawo loyera kwambiri komanso kukana kwa oxidizing mpweya.
CVD SiC kapena CVI SiC imagwiritsidwa ntchito ku Graphite ya magawo osavuta kapena ovuta kupanga. Kupaka kungagwiritsidwe ntchito mosiyanasiyana makulidwe ndi mbali zazikulu kwambiri.
Mawonekedwe:
· Kukaniza kwabwino kwa Thermal Shock
· Kukaniza Kwabwino Kwambiri Kwa Thupi
· Kukaniza Kwabwino Kwambiri kwa Chemical
· Kuyera Kwambiri Kwambiri
· Kupezeka mu Complex Shape
· Yogwiritsidwa ntchito pansi pa Oxidizing Atmosphere
Katundu Wamtundu wa Base Graphite Material:
Kuchulukana Kwambiri: | 1.85g/cm3 |
Kukanika kwa Magetsi: | 11 μm |
Flexural Strenth: | 49 MPa (500kgf/cm2) |
Kulimba M'mphepete mwa nyanja: | 58 |
Phulusa: | <5ppm |
Thermal Conductivity: | 116 W/mK (100 kcal/mhr-℃) |
Mpweya umapereka ma susceptors ndi zigawo za graphite pazitsulo zonse zamakono za epitaxy. Mbiri yathu imaphatikizapo zoyezera migolo zomwe zimagwiritsidwa ntchito ndi ma LPE mayunitsi, zoyatsira zikondamoyo za LPE, CSD, ndi mayunitsi a Gemini, ndi zowotchera zawafer imodzi zogwiritsidwa ntchito ndi ma ASM mayunitsi. imapereka mapangidwe abwino kwambiri a pulogalamu yanu.
Zambiri Zogulitsa