Potsatira chiphunzitso cha "ubwino, ntchito, magwiridwe antchito ndi kukula", talandira zikhulupiliro ndi matamando kuchokera kwa ogulitsa kunyumba komanso padziko lonse lapansi pa IOS Certificate China 99.5%Sic Ceramic TargetSilicon Carbide Sputtering Target for Coating, Zolinga zathu zazikulu ndikupatsa makasitomala athu padziko lonse lapansi zabwino, mtengo wampikisano, kutumiza kokhutitsidwa ndi ntchito zabwino kwambiri.
Potsatira chiphunzitso cha "ubwino, ntchito, magwiridwe antchito ndi kukula", talandira zikhulupiliro ndi matamando kuchokera kwa shopper wapakhomo komanso wapadziko lonse lapansi chifukwaChina Silicon Carbide Sputtering Target, Sic Ceramic Target, Tsopano tili ndi dongosolo lokhazikika komanso lathunthu, lomwe limatsimikizira kuti chinthu chilichonse chikhoza kukwaniritsa zofunikira za makasitomala. Kupatula apo, zinthu zathu zonse zidawunikiridwa mosamalitsa tisanatumizidwe.
Mpweya wa carbon / carbon(pambuyo pake amatchedwa "C/C kapena CFC”) ndi mtundu wazinthu zophatikizika zomwe zimachokera ku kaboni ndipo zimalimbikitsidwa ndi kaboni fiber ndi zinthu zake (carbon fiber preform). Ili ndi inertia ya carbon komanso mphamvu ya carbon fiber. Ili ndi zida zabwino zamakina, kukana kutentha, kukana kwa dzimbiri, kunyowetsa mikangano ndi mawonekedwe amafuta ndi magetsi.
CVD-SiC❖ kuyanika ali ndi makhalidwe a dongosolo yunifolomu, zinthu yaying'ono, kutentha kukana, makutidwe ndi okosijeni kukana, chiyero mkulu, asidi & alkali kukana ndi reagent organic, ndi katundu khola thupi ndi mankhwala.
Poyerekeza ndi zida za graphite zoyera kwambiri, graphite imayamba kutulutsa oxidize pa 400C, yomwe imayambitsa kutayika kwa ufa chifukwa cha okosijeni, zomwe zimapangitsa kuipitsidwa kwa chilengedwe ku zida zotumphukira ndi zipinda zowulutsira, ndikuwonjezera zonyansa za chilengedwe choyera kwambiri.
Komabe, ❖ kuyanika kwa SiC kumatha kukhalabe kukhazikika kwathupi ndi mankhwala pa madigiri a 1600, Kumagwiritsidwa ntchito kwambiri m'makampani amakono, makamaka m'makampani opanga ma semiconductor.
Kampani yathu imapereka ntchito zokutira za SiC pogwiritsa ntchito njira ya CVD pamtunda wa graphite, zoumba ndi zinthu zina, kotero kuti mpweya wapadera wokhala ndi mpweya ndi silicon umachita pa kutentha kwambiri kuti upeze mamolekyu apamwamba a SiC, mamolekyu oyikidwa pamwamba pa zinthu zokutira, kupanga SIC chitetezo wosanjikiza. SIC yopangidwa imamangirizidwa mwamphamvu ku maziko a graphite, kupereka maziko a graphite apadera, motero kumapangitsa kuti pamwamba pa graphite ikhale yosakanikirana, yopanda Porosity, kukana kutentha kwambiri, kukana kwa dzimbiri ndi kukana kwa okosijeni.
Zofunikira zazikulu:
1. Kutentha kwakukulu kwa okosijeni kukana:
kukana kwa okosijeni kumakhalabe kwabwino kwambiri pamene kutentha kumafika pa 1600 C.
2. Chiyero chachikulu: chopangidwa ndi kuyika kwa nthunzi wamankhwala pansi pa kutentha kwambiri kwa chlorination.
3. Kukana kukokoloka kwa nthaka: kuuma kwakukulu, pamwamba pamtunda, tinthu tating'onoting'ono.
4. Kukana kwa dzimbiri: asidi, alkali, mchere ndi organic reagents.
Zomwe Zazikulu Zakutchinjiriza za CVD-SIC:
| SiC-CVD | ||
| Kuchulukana | (g/cc)
| 3.21 |
| Flexural mphamvu | (Mpa)
| 470 |
| Kukula kwamafuta | (10-6/K) | 4
|
| Thermal conductivity | (W/mK) | 300
|
