ICP Etch Carrier

Kufotokozera Kwachidule:

Malo Ochokera:China

Kapangidwe ka Crystal:FCCβ gawo

Kachulukidwe:3.21 g/cm;

Kuuma :2500 Vickers;

Kukula Kwambewu:2 ~ 10μm;

Chemical Purity:99.99995%;

Kutentha Kwambiri:640J·kg-1·K-1;

Kutentha kwa Sublimation:2700 ℃;

Felexural Mphamvu:415 Mpa (RT 4-Point);

Young's Modulus:430 Gpa (4pt bend, 1300 ℃);

Kukula kwa Thermal (CTE):4.5 10-6K-1;

Thermal Conductivity:300 (W/MK);

Titumizireni imelo Tsitsani ngati PDF

Tsatanetsatane wa Zamalonda

Zolemba Zamalonda

Mafotokozedwe Akatundu

Kampani yathu imapereka ntchito zokutira za SiC pogwiritsa ntchito njira ya CVD pamtunda wa graphite, zoumba ndi zinthu zina, kotero kuti mpweya wapadera wokhala ndi mpweya ndi silicon umachita pa kutentha kwambiri kuti upeze mamolekyu apamwamba a SiC, mamolekyu oyikidwa pamwamba pa zinthu zokutira, kupanga SIC chitetezo wosanjikiza.

Zofunikira zazikulu:

1. Kutentha kwakukulu kwa okosijeni kukana:

kukana kwa okosijeni kumakhalabe kwabwino kwambiri pamene kutentha kumafika pa 1600 C.

2. Chiyero chachikulu: chopangidwa ndi kuyika kwa nthunzi wamankhwala pansi pa kutentha kwa chlorination.

3. Kukana kukokoloka kwa nthaka: kuuma kwakukulu, pamwamba, tinthu tating'onoting'ono.

4. Kukana kwa dzimbiri: asidi, alkali, mchere ndi organic reagents.

Zofunika Kwambiri za CVD-SIC Coating

SiC-CVD Properties
Kapangidwe ka Crystal	FCC β gawo
Kuchulukana	g/cm³	3.21
Kuuma	Vickers kuuma	2500
Ukulu wa Mbewu	μm	2-10
Chemical Purity	%	99.99995
Kutentha Mphamvu	J·kg-1 ·K-1	640
Kutentha kwa Sublimation	℃	2700
Felexural Mphamvu	MPa (RT 4-point)	415
Young's Modulus	Gpa (4pt bend, 1300 ℃)	430
Kukula kwa Thermal (CTE)	10-6K-1	4.5
Thermal conductivity	(W/mK)	300