Chemical vapor deposition (CVD) refers to the process of depositing a solid film on the surface of a silicon wafer through a chemical reaction of a gas mixture. According to the different reaction conditions (pressure, precursor), it can be divided into various equipment models.
What processes are these two devices used for?
PECVD (Plasma Enhanced) equipment is the most numerous and most commonly used, used in OX, Nitride, metal gate, amorphous carbon, etc.; LPCVD (Low Power) is usually used in Nitride, poly, TEOS.
What is the principle?
PECVD-a process that perfectly combines plasma energy and CVD. PECVD technology uses low-temperature plasma to induce glow discharge at the cathode of the process chamber (i.e., sample tray) under low pressure. This glow discharge or other heating device can raise the temperature of the sample to a predetermined level, and then introduce a controlled amount of process gas. This gas undergoes a series of chemical and plasma reactions, and finally forms a solid film on the surface of the sample.
LPCVD - Low-pressure chemical vapor deposition (LPCVD) is designed to reduce the operating pressure of the reaction gas in the reactor to about 133Pa or less.
What are the characteristics of each?
PECVD - A process that perfectly combines plasma energy and CVD: 1) Low-temperature operation (avoiding high temperature damage to the equipment); 2) Fast film growth; 3) Not picky about materials, OX, Nitride, metal gate, amorphous carbon can all grow; 4) There is an in-situ monitoring system, which can adjust the recipe through ion parameters, gas flow rate, temperature and film thickness.
LPCVD - Thin films deposited by LPCVD will have better step coverage, good composition and structure control, high deposition rate and output. In addition, LPCVD does not require carrier gas, so it greatly reduces the source of particle pollution and is widely used in high value-added semiconductor industries for thin film deposition.
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Post time: Jul-24-2024