Silicon Carbide is a hard compound containing silicon and carbon, and is found in nature as the extremely rare mineral moissanite. Silicon carbide particles can be bonded together by sintering to form very hard ceramics, which are widely used in applications requiring high durability, especially in semiconductor procession.
Physical structure of SiC
What is SiC Coating?
SiC coating is a dense, wear-resistant silicon carbide coating with high corrosion and heat resistance and excellent thermal conductivity. This high-purity SiC coating is primarily used in the semiconductor and electronics industries to protect wafer carriers, bases and heating elements from corrosive and reactive environments. SiC coating is also suitable for vacuum furnaces and sample heating in high vacuum, reactive and oxygen environments.
High purity SiC coating surface
What is the SiC coating process?
A thin layer of silicon carbide is deposited on the surface of the substrate using CVD (Chemical Vapor Deposition). Deposition is usually carried out at temperatures of 1200-1300°C and the thermal expansion behavior of the substrate material should be compatible with the SiC coating to minimize thermal stress.
CVD SIC Coating FILM CRYSTAL STRUCTURE
The physical properties of SiC coating are mainly reflected in its high temperature resistance, hardness, corrosion resistance and thermal conductivity.
Typical physical parameters are usually as follows:
Hardness: SiC coating typically have a Vickers Hardness in the range of 2000-2500 HV, which gives them extremely high wear and impact resistance in industrial applications.
Density: SiC coatings typically have a density of 3.1-3.2 g/cm³. The high density contributes to the mechanical strength and durability of the coating.
Thermal conductivity: SiC coatings have a high thermal conductivity, typically in the range of 120-200 W/m-K (at 20°C). This gives it good thermal conductivity in high temperature environments and makes it particularly suitable for heat treatment equipment in the semiconductor industry.
Melting point: silicon carbide has a melting point of approximately 2730°C and has excellent thermal stability at extreme temperatures.
Coefficient of Thermal Expansion: SiC coatings have a low linear coefficient of thermal expansion (CTE), typically in the range of 4.0-4.5 µm/m-K (in the 25-1000℃). This means that its dimensional stability is excellent over large temperature differences.
Corrosion resistance: SiC coatings are extremely resistant to corrosion in strong acid, alkali and oxidizing environments, especially when using strong acids (such as HF or HCl), their corrosion resistance far exceeds that of conventional metal materials.
SiC coatings can be applied to the following materials:
High purity isostatic graphite (low CTE)
Tungsten
Molybdenum
Silicon Carbide
Silicon Nitride
Carbon-Carbon Composites (CFC)
SiC coated products are commonly used in the following areas:
LED chip production
Polysilicon production
Semiconductor crystal growth
Silicon and SiC epitaxy
Wafer heat treatment and etching
Why choose VET Energy?
VET Energy is a leading manufacturer, innovator and leader of SiC coating products in China, the main SiC coating products include wafer carrier with SiC coating, SiC coated epitaxial susceptor, SiC coated graphite ring, Half-moon parts with SiC coating, SiC coated carbon-carbon composite, SiC coated wafer boat, SiC coated heater, etc. VET Energy is committed to providing the semiconductor industry with the ultimate technology and product solutions, and supports customization services. We sincerely look forward to being your long-term partner in China.
If you have any inquiries or need additional details, please don’t hesitate to get in touch with us.
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Email: steven@china-vet.com
Post time: Oct-18-2024