Introduction of Silicon Carbide
Silicon carbide (SIC) has a density of 3.2g/cm3. Natural silicon carbide is very rare and is mainly synthesized by artificial method. According to the different classification of crystal structure, silicon carbide can be divided into two categories: α SiC and β SiC. The third generation semiconductor represented by silicon carbide (SIC) has high frequency, high efficiency, high power, high pressure resistance, high temperature resistance and strong radiation resistance. It is suitable for the major strategic needs of energy conservation and emission reduction, intelligent manufacturing and information security. It is to support the independent innovation and development and transformation of new generation mobile communication, new energy vehicles, high-speed rail trains, energy Internet and other industries The upgraded core materials and electronic components have become the focus of global semiconductor technology and industry competition. In 2020, the global economic and trade pattern is in a period of remodeling, and the internal and external environment of China’s economy is more complex and severe, but the third generation semiconductor industry in the world is growing against the trend. It needs to be recognized that the silicon carbide industry has entered a new development stage.
Silicon carbide application
Silicon carbide application in semiconductor industry silicon carbide semiconductor industry chain mainly includes silicon carbide high purity powder, single crystal substrate, epitaxial, power device, module packaging and terminal application, etc
1. single crystal substrate is the support material, conductive material and epitaxial growth substrate of semiconductor. At present, the growth methods of SiC single crystal include physical gas transfer (PVT), liquid phase (LPE), high temperature chemical vapor deposition (htcvd) and so on. 2. epitaxial silicon carbide epitaxial sheet refers to the growth of a single crystal film (epitaxial layer) with certain requirements and the same orientation as the substrate. In practical application, the wide band gap semiconductor devices are almost all on the epitaxial layer, and silicon carbide chips themselves are only used as substrates, including Gan epitaxial layers.
3. high purity SiC powder is a raw material for the growth of silicon carbide single crystal by PVT method. Its product purity directly affects the growth quality and electrical properties of SiC single crystal.
4. the power device is made of silicon carbide, which has the characteristics of high temperature resistance, high frequency and high efficiency. According to the working form of the device, SiC power devices mainly include power diodes and power switch tubes.
5. in the third generation semiconductor application, the advantages of the end application are that they can complement the GaN semiconductor. Due to the advantages of high conversion efficiency, low heating characteristics and lightweight of SiC devices, the demand of downstream industry continues to increase, which has the trend of replacing SiO2 devices. The current situation of silicon carbide market development is continuously developing. Silicon carbide leads the third generation semiconductor development market application. The third generation semiconductor products have been infiltrated faster, the application fields are expanding continuously, and the market is growing rapidly with the development of automobile electronics, 5g communication, fast charging power supply and military application. .
Post time: Mar-16-2021