Semiconductor device is the core of the modern industrial machine equipment, widely used in computers, consumer electronics, network communications, automotive electronics, and other areas of the core, the semiconductor industry is mainly composed of four basic components: integrated circuits, optoelectronic devices, discrete device, sensor, which accounts for more than 80% of integrated circuits, so often and semiconductor and integrated circuit equivalent.
Integrated circuit, according to the product category is mainly divided into four categories: microprocessor, memory, logic devices, simulator parts. However, with the continuous expansion of the application field of semiconductor devices, many special occasions require semiconductors to be able to adhere to the use of high temperature, strong radiation, high power and other environments, do not damage, the first and second generation of semiconductor materials are powerless, so the third generation of semiconductor materials came into being.
At present, the wide band gap semiconductor materials represented by silicon carbide (SiC), gallium nitride (GaN), zinc oxide (ZnO), diamond, aluminum nitride (AlN) occupy the dominant market with greater advantages, collectively referred to as the third generation semiconductor materials. The third generation of semiconductor materials with a wider band gap width, the higher the breakdown electric field, thermal conductivity, electronic saturated rate and higher ability to resist radiation, more suitable for making high temperature, high frequency, resistance to radiation and high power devices, usually known as wide bandgap semiconductor materials (forbidden band width is greater than 2.2 eV), also called high temperature the semiconductor materials. From the current research on third-generation semiconductor materials and devices, silicon carbide and gallium nitride semiconductor materials are more mature, and silicon carbide technology is the most mature, while the research on zinc oxide, diamond, aluminum nitride and other materials is still in the initial stage.
Materials and their Properties：
Silicon carbide material is widely used in ceramic ball bearings, valves, semiconductor materials, gyros, measuring instruments, aerospace and other fields, has become an irreplaceable material in many industrial fields.
SiC is a kind of natural superlattice and a typical homogeneous polytype. There are more than 200 (currently known) homotypic polytypic families due to the difference in packing sequence between Si and C diatomic layers, which leads to different crystal structures. Therefore, SiC is very suitable for the new generation of light emitting diode (LED) substrate material, high power electronic materials.
|
characteristic |
|
|
physical property |
High hardness (3000kg/mm), can cut ruby |
| High wear resistance, second only to diamond | |
| The thermal conductivity is 3 times higher than that of Si and 8~10 times higher than that of GaAs. | |
| The thermal stability of SiC is high and it is impossible to melt at atmospheric pressure | |
| Good heat dissipation performance is very important for high-power devices | |
|
chemical property |
Very strong corrosion resistance, resistant to almost any known corrosive agent at room temperature |
| SiC surface easily oxidizes to form SiO, thin layer, can prevent its further oxidation, in Above 1700℃, the oxide film melts and oxidizes rapidly | |
| The bandgap of 4H-SIC and 6H-SIC is about 3 times that of Si and 2 times that of GaAs: The breakdown electric field intensity is an order of magnitude higher than Si, and the electron drift velocity is saturated Two and a half times the Si. The bandgap of 4H-SIC is wider than that of 6H-SIC |
Post time: Aug-01-2022