SiC has excellent physical and chemical properties, such as high melting point, high hardness, corrosion resistance and oxidation resistance. Especially in the range of 1800-2000 ℃, SiC has good ablation resistance. Therefore, it has broad application prospects in aerospace, weapon equipment and other fields. However, SiC itself cannot be used as a structural material, so the coating method is usually used to make use of its wear resistance and ablation resistance.
Silicon carbide (SIC) semiconductor material is the third generation semiconductor material developed after the first generation element semiconductor material (Si, GE) and the second generation compound semiconductor material (GaAs, gap, InP, etc.). As a wide band gap semiconductor material, silicon carbide has the characteristics of large band gap width, high breakdown field strength, high thermal conductivity, high carrier saturation drift speed, small dielectric constant, strong radiation resistance and good chemical stability. It can be used to manufacture various high-frequency and high-power devices with high temperature resistance and can be used in occasions where silicon devices are incompetent, Or produce the effect that silicon devices are difficult to produce in general applications.
Main application: used for wire cutting of 3-12 inch monocrystalline silicon, polycrystalline silicon, potassium arsenide, quartz crystal, etc. Engineering processing materials for solar photovoltaic industry, semiconductor industry and piezoelectric crystal industry. Used in semiconductor, lightning rod, circuit element, high temperature application, ultraviolet detector, structural material, astronomy, disc brake, clutch, diesel particulate filter, filament pyrometer, ceramic film, cutting tool, heating element, nuclear fuel, jewelry, steel, protective equipment, catalyst support and other fields
Post time: Feb-17-2022