SiC Coated Graphite Carriers，sic coating ,SiC coating coated of Graphite substrate for Semiconductor

Silicon carbide coated graphite disk is to prepare silicon carbide protective layer on the surface of graphite by physical or chemical vapor deposition and spraying. The prepared silicon carbide protective layer can be firmly bonded to the graphite matrix, making the surface of the graphite base dense and free of voids, giving the graphite matrix special properties, including oxidation resistance, acid and alkali resistance, erosion resistance, corrosion resistance, etc. At present, Gan coating is one of the best core components for epitaxial growth of silicon carbide.

Silicon carbide semiconductor is the core material of the newly developed wide band gap semiconductor. Its devices have the characteristics of high temperature resistance, high voltage resistance, high frequency, high power and radiation resistance. It has the advantages of fast switching speed and high efficiency. It can greatly reduce product power consumption, improve energy conversion efficiency and reduce product volume. It is mainly used in 5g communication, national defense and military industry The RF field represented by aerospace and the power electronics field represented by new energy vehicles and “new infrastructure” have clear and considerable market prospects in both civil and military fields.

Silicon carbide substrate is the core material of the newly developed wide band gap semiconductor. Silicon carbide substrate is mainly used in microwave electronics, power electronics and other fields. It is at the front end of the wide band gap semiconductor industry chain and is the cutting-edge and basic core key material.Silicon carbide substrate can be divided into two types: semi insulating and conductive. Among them, semi insulating silicon carbide substrate has high resistivity (resistivity ≥ 105 Ω· cm). Semi insulating substrate combined with heterogeneous gallium nitride epitaxial sheet can be used as the material of RF devices, which is mainly used in 5g communication, national defense and military industry in the above scenes; The other is conductive silicon carbide substrate with low resistivity (the resistivity range is 15 ~ 30m Ω· cm). The homogeneous epitaxy of conductive silicon carbide substrate and silicon carbide can be used as materials for power devices. The main application scenarios are electric vehicles, power systems and other fields