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  • Types of Special Graphite

    Types of Special Graphite

    Special graphite is a high purity, high density and high strength graphite material and has excellent corrosion resistance, high temperature stability and great electrical conductivity. It is made of natural or artificial graphite after high temperature heat treatment and high pressure processing...
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  • Analysis of thin film deposition equipment – the principles and applications of PECVD/LPCVD/ALD equipment

    Analysis of thin film deposition equipment – the principles and applications of PECVD/LPCVD/ALD equipment

    Thin film deposition is to coat a layer of film on the main substrate material of the semiconductor. This film can be made of various materials, such as insulating compound silicon dioxide, semiconductor polysilicon, metal copper, etc. The equipment used for coating is called thin film deposition...
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  • Important materials that determine the quality of monocrystalline silicon growth – thermal field

    Important materials that determine the quality of monocrystalline silicon growth – thermal field

    The growth process of monocrystalline silicon is completely carried out in the thermal field. A good thermal field is conducive to improving the quality of crystals and has a higher crystallization efficiency. The design of the thermal field largely determines the changes in temperature gradients...
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  • What are the technical difficulties of silicon carbide crystal growth furnace?

    What are the technical difficulties of silicon carbide crystal growth furnace?

    The crystal growth furnace is the core equipment for silicon carbide crystal growth. It is similar to the traditional crystalline silicon grade crystal growth furnace. The furnace structure is not very complicated. It is mainly composed of furnace body, heating system, coil transmission mechanism...
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  • What are the defects of silicon carbide epitaxial layer

    What are the defects of silicon carbide epitaxial layer

    The core technology for the growth of SiC epitaxial materials is firstly defect control technology, especially for defect control technology that is prone to device failure or reliability degradation. The study of the mechanism of substrate defects extending into the epi...
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  • Oxidized standing grain and epitaxial growth technology-Ⅱ

    Oxidized standing grain and epitaxial growth technology-Ⅱ

      2. Epitaxial thin film growth The substrate provides a physical support layer or conductive layer for Ga2O3 power devices. The next important layer is the channel layer or epitaxial layer used for voltage resistance and carrier transport. In order to increase breakdown voltage and minimize con...
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  • Gallium oxide single crystal and epitaxial growth technology

    Gallium oxide single crystal and epitaxial growth technology

    Wide bandgap (WBG) semiconductors represented by silicon carbide (SiC) and gallium nitride (GaN) have received widespread attention. People have high expectations for the application prospects of silicon carbide in electric vehicles and power grids, as well as the application prospects of gallium...
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  • What are the technical barriers to silicon carbide?Ⅱ

    What are the technical barriers to silicon carbide?Ⅱ

      The technical difficulties in stably mass-producing high-quality silicon carbide wafers with stable performance include: 1) Since crystals need to grow in a high-temperature sealed environment above 2000°C, the temperature control requirements are extremely high; 2) Since silicon carbide has ...
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  • What are the technical barriers to silicon carbide?

    What are the technical barriers to silicon carbide?

    The first generation of semiconductor materials is represented by traditional silicon (Si) and germanium (Ge), which are the basis for integrated circuit manufacturing. They are widely used in low-voltage, low-frequency, and low-power transistors and detectors. More than 90% of semiconductor prod...
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