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Commonly used pedestals for vapor phase epitaxy
by admin on 24-07-30
During the vapor phase epitaxy (VPE) process, the role of the pedestal is to support the substrate and ensure uniform heating during the growth process. Different types of pedestals are suitable for different growth conditions and material systems. The following are some...
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How to extend the service life of tantalum carbide coated products?
by admin on 24-07-26
Tantalum carbide coated products are a commonly used high-temperature material, characterized by high temperature resistance, corrosion resistance, wear resistance, etc. Therefore, they are widely used in industries such as aerospace, chemical, and energy. In order to ex...
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What is the difference between PECVD and LPCVD in semiconductor CVD equipment?
by admin on 24-07-24
Chemical vapor deposition (CVD) refers to the process of depositing a solid film on the surface of a silicon wafer through a chemical reaction of a gas mixture. According to the different reaction conditions (pressure, precursor), it can be divided into various equipment...
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Characteristics of silicon carbide graphite mold
by admin on 24-07-18
Silicon Carbide Graphite Mold Silicon carbide graphite mold is a composite mold with silicon carbide (SiC) as the base and graphite as the reinforcement material. This mold has excellent thermal conductivity, high temperature resistance, corrosion resistance an...
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Semiconductor process full process of photolithography
by admin on 24-07-16
The manufacturing of each semiconductor product requires hundreds of processes. We divide the entire manufacturing process into eight steps: wafer processing-oxidation-photolithography-etching-thin film deposition-epitaxial growth-diffusion-ion implantation. To help you...
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4 billion! SK Hynix announces semiconductor advanced packaging investment at Purdue Research Park
by admin on 24-07-09
West Lafayette, Indiana – SK hynix Inc. announced plans to invest nearly $4 billion to build an advanced packaging manufacturing and R&D facility for artificial intelligence products at Purdue Research Park. Establishing a key link in the U.S. semiconductor supply chain in West Lafayett...
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Laser technology leads the transformation of silicon carbide substrate processing technology
by admin on 24-07-08
1. Overview of silicon carbide substrate processing technology The current silicon carbide substrate processing steps include: grinding the outer circle, slicing, chamfering, grinding, polishing, cleaning, etc. Slicing is an important step in semiconductor substrate pr...
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Mainstream thermal field materials: C/C composite materials
by admin on 24-07-01
Carbon-carbon composites are a type of carbon fiber composites, with carbon fiber as the reinforcement material and deposited carbon as the matrix material. The matrix of C/C composites is carbon. Since it is almost entirely composed of elemental carbon, it has excellent high temperature resistan...
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Three major techniques for SiC crystal growth
by admin on 24-07-01
As shown in Fig. 3, there are three dominant techniques aiming to provide SiC single crystal with high quality and effciency: liquid phase epitaxy (LPE), physical vapor transport (PVT), and high-temperature chemical vapor deposition (HTCVD). PVT is a well-established process for producing SiC sin...
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