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  • What are the technical barriers to silicon carbide?Ⅱ

    What are the technical barriers to silicon carbide?Ⅱ

    The technical difficulties in stably mass-producing high-quality silicon carbide wafers with stable performance include: 1) Since crystals need to grow in a high-temperature sealed environment above 2000°C, the temperature control requirements are extremely high; 2) Since silicon carbide has more...
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  • What are the technical barriers to silicon carbide?

    What are the technical barriers to silicon carbide?

    The first generation of semiconductor materials is represented by traditional silicon (Si) and germanium (Ge), which are the basis for integrated circuit manufacturing. They are widely used in low-voltage, low-frequency, and low-power transistors and detectors. More than 90% of semiconductor prod...
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  • How is SiC micro powder made?

    How is SiC micro powder made?

    SiC single crystal is a Group IV-IV compound semiconductor material composed of two elements, Si and C, in a stoichiometric ratio of 1:1. Its hardness is second only to diamond. The carbon reduction of silicon oxide method to prepare SiC is mainly based on the following chemical reaction formula...
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  • How do epitaxial layers help semiconductor devices?

    How do epitaxial layers help semiconductor devices?

    The origin of the name epitaxial wafer First, let’s popularize a small concept: wafer preparation includes two major links: substrate preparation and epitaxial process. The substrate is a wafer made of semiconductor single crystal material. The substrate can directly enter the wafer manufacturing...
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  • Introduction to chemical vapor deposition (CVD) thin film deposition technology

    Introduction to chemical vapor deposition (CVD) thin film deposition technology

    Chemical Vapor Deposition (CVD) is an important thin film deposition technology, often used to prepare various functional films and thin-layer materials, and is widely used in semiconductor manufacturing and other fields. 1. Working principle of CVD In the CVD process, a gas precursor (one or mo...
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  • The “black gold” secret behind the photovoltaic semiconductor industry: the desire and dependence on isostatic graphite

    The “black gold” secret behind the photovoltaic semiconductor industry: the desire and dependence on isostatic graphite

    Isostatic graphite is a very important material in photovoltaics and semiconductors. With the rapid rise of domestic isostatic graphite companies, the monopoly of foreign companies in China has been broken. With continuous independent research and development and technological breakthroughs, the ...
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  • Unveiling the Essential Characteristics of Graphite Boats in Semiconductor Ceramics Manufacturing

    Unveiling the Essential Characteristics of Graphite Boats in Semiconductor Ceramics Manufacturing

    Graphite Boats, also known as graphite boats, play a crucial role in the intricate processes of semiconductor ceramics manufacturing. These specialized vessels serve as reliable carriers for semiconductor wafers during high-temperature treatments, ensuring precise and controlled processing. With ...
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  • The internal structure of the furnace tube equipment is explained in detail

    The internal structure of the furnace tube equipment is explained in detail

      As shown above, is a typical The first half: Heating Element (heating coil) : located around the furnace tube, usually made of resistance wires, used to heat the inside of the furnace tube. Quartz Tube: The core of a hot oxidation furnace, made of high-purity quartz that can withstand hig...
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  • Effects of SiC substrate and epitaxial materials on MOSFET device characteristics

    Effects of SiC substrate and epitaxial materials on MOSFET device characteristics

    Triangular defect Triangular defects are the most fatal morphological defects in SiC epitaxial layers. A large number of literature reports have shown that the formation of triangular defects is related to the 3C crystal form. However, due to different growth mechanisms, the morphology of many tr...
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