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Introduction to the third generation semiconductor GaN and related epitaxial technology
1. Third-generation semiconductors The first-generation semiconductor technology was developed based on semiconductor materials such as Si and Ge. It is the material basis for the development of transistors and integrated circuit technology. The first-generation semiconductor materials laid the f...Read more -
Numerical simulation study on the effect of porous graphite on silicon carbide crystal growth
The basic process of SiC crystal growth is divided into sublimation and decomposition of raw materials at high temperature, transportation of gas phase substances under the action of temperature gradient, and recrystallization growth of gas phase substances at the seed crystal. Based on this, the...Read more -
Types of Special Graphite
Special graphite is a high purity, high density and high strength graphite material and has excellent corrosion resistance, high temperature stability and great electrical conductivity. It is made of natural or artificial graphite after high temperature heat treatment and high pressure processing...Read more -
Analysis of thin film deposition equipment – the principles and applications of PECVD/LPCVD/ALD equipment
Thin film deposition is to coat a layer of film on the main substrate material of the semiconductor. This film can be made of various materials, such as insulating compound silicon dioxide, semiconductor polysilicon, metal copper, etc. The equipment used for coating is called thin film deposition...Read more -
Important materials that determine the quality of monocrystalline silicon growth – thermal field
The growth process of monocrystalline silicon is completely carried out in the thermal field. A good thermal field is conducive to improving the quality of crystals and has a higher crystallization efficiency. The design of the thermal field largely determines the changes in temperature gradients...Read more -
What are the technical difficulties of silicon carbide crystal growth furnace?
The crystal growth furnace is the core equipment for silicon carbide crystal growth. It is similar to the traditional crystalline silicon grade crystal growth furnace. The furnace structure is not very complicated. It is mainly composed of furnace body, heating system, coil transmission mechanism...Read more -
What are the defects of silicon carbide epitaxial layer
The core technology for the growth of SiC epitaxial materials is firstly defect control technology, especially for defect control technology that is prone to device failure or reliability degradation. The study of the mechanism of substrate defects extending into the epi...Read more -
Oxidized standing grain and epitaxial growth technology-Ⅱ
3. Epitaxial thin film growth The substrate provides a physical support layer or conductive layer for Ga2O3 power devices. The next important layer is the channel layer or epitaxial layer used for voltage resistance and carrier transport. In order to increase breakdown voltage and minimize conduc...Read more -
Gallium oxide single crystal and epitaxial growth technology
Wide bandgap (WBG) semiconductors represented by silicon carbide (SiC) and gallium nitride (GaN) have received widespread attention. People have high expectations for the application prospects of silicon carbide in electric vehicles and power grids, as well as the application prospects of gallium...Read more
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