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Fuel Cell Membrane Electrode, Customized MEA -1
by admin on 22-09-21
A membrane electrode assembly (MEA) is an assembled stack of: Proton exchange membrane (PEM) Catalyst Gas Diffusion Layer (GDL) Specifications of membrane electrode assembly: Thickness 50 μm. Sizes 5 cm2, 16 cm2, 25 cm2, 50 cm2 or 100 cm2 active surface areas. Catalyst Loading Anode = 0.5 ...
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Latest innovation custom fuel cell MEA for power tools/boats/bikes/scooters
by admin on 22-09-21
A membrane electrode assembly (MEA) is an assembled stack of: Proton exchange membrane (PEM) Catalyst Gas Diffusion Layer (GDL) Specifications of membrane electrode assembly: Thickness 50 μm. Sizes 5 cm2, 16 cm2, 25 cm2, 50 cm2 or 100 cm2 active surface areas. Catalyst Loading Anode = 0.5 ...
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Introduction to the application scenario of hydrogen energy technology
by admin on 22-09-17

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Automatic reactor production process
by admin on 22-09-17
Ningbo VET Energy Technology Co., Ltd. is a high-tech enterprise established in China, focusing on Advanced Material Technology and automotive products. We are professional manufacturer and supplier with our own factory and sales team.
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Two electric vacuum pumps were shipped to America
by admin on 22-09-14

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Graphite felt was shipped to Vietnam
by admin on 22-09-14

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SiC oxidation – resistant coating was prepared on graphite surface by CVD process
by admin on 22-09-14
SiC coating can be prepared by chemical vapor deposition (CVD), precursor transformation, plasma spraying, etc. The coating prepared by CHEMICAL vapor deposition is uniform and compact, and has good designability. Using methyl trichlosilane. (CHzSiCl3, MTS) as silicon source, SiC coating prepar...
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Silicon carbide structure
by admin on 22-08-30
Three main types of silicon carbide polymorph There are about 250 crystalline forms of silicon carbide. Because silicon carbide has a series of homogeneous polytypes with similar crystal structure, silicon carbide has the characteristics of homogeneous polycrystalline. Silicon carbide (Mosanite)...
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Research status of SiC integrated circuit
by admin on 22-08-23
Different from S1C discrete devices which pursue high voltage, high power, high frequency and high temperature characteristics, the research goal of SiC integrated circuit is mainly to obtain high temperature digital circuit for intelligent power ICs control circuit. As SiC integrated circuit for...
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