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  • Characteristics of silicon carbide graphite mold

    Characteristics of silicon carbide graphite mold

    Silicon Carbide Graphite Mold Silicon carbide graphite mold is a composite mold with silicon carbide (SiC) as the base and graphite as the reinforcement material. This mold has excellent thermal conductivity, high temperature resistance, corrosion resistance and wear re...
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  • Semiconductor process full process of photolithography

    Semiconductor process full process of photolithography

    The manufacturing of each semiconductor product requires hundreds of processes. We divide the entire manufacturing process into eight steps: wafer processing-oxidation-photolithography-etching-thin film deposition-epitaxial growth-diffusion-ion implantation. To help you...
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  • 4 billion! SK Hynix announces semiconductor advanced packaging investment at Purdue Research Park

    4 billion! SK Hynix announces semiconductor advanced packaging investment at Purdue Research Park

    West Lafayette, Indiana – SK hynix Inc. announced plans to invest nearly $4 billion to build an advanced packaging manufacturing and R&D facility for artificial intelligence products at Purdue Research Park. Establishing a key link in the U.S. semiconductor supply chain in West Lafayett...
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  • Laser technology leads the transformation of silicon carbide substrate processing technology

    Laser technology leads the transformation of silicon carbide substrate processing technology

    1. Overview of silicon carbide substrate processing technology The current silicon carbide substrate processing steps include: grinding the outer circle, slicing, chamfering, grinding, polishing, cleaning, etc. Slicing is an important step in semiconductor substrate proc...
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  • Mainstream thermal field materials: C/C composite materials

    Mainstream thermal field materials: C/C composite materials

    Carbon-carbon composites are a type of carbon fiber composites, with carbon fiber as the reinforcement material and deposited carbon as the matrix material. The matrix of C/C composites is carbon. Since it is almost entirely composed of elemental carbon, it has excellent high temperature resistan...
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  • Three major techniques for SiC crystal growth

    Three major techniques for SiC crystal growth

    As shown in Fig. 3, there are three dominant techniques aiming to provide SiC single crystal with high quality and effciency: liquid phase epitaxy (LPE), physical vapor transport (PVT), and high-temperature chemical vapor deposition (HTCVD). PVT is a well-established process for producing SiC sin...
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  • Third-generation semiconductor GaN and related epitaxial technology brief introduction

    Third-generation semiconductor GaN and related epitaxial technology brief introduction

    1. Third-generation semiconductors The first-generation semiconductor technology was developed based on semiconductor materials such as Si and Ge. It is the material basis for the development of transistors and integrated circuit technology. The first-generation semiconductor materials laid the f...
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  • 23.5 billion, Suzhou’s super unicorn is going to IPO

    23.5 billion, Suzhou’s super unicorn is going to IPO

    After 9 years of entrepreneurship, Innoscience has raised more than 6 billion yuan in total financing, and its valuation has reached an astonishing 23.5 billion yuan. The list of investors is as long as dozens of companies: Fukun Venture Capital, Dongfang State-owned Assets, Suzhou Zhanyi, Wujian...
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  • How do tantalum carbide coated products enhance the corrosion resistance of materials?

    How do tantalum carbide coated products enhance the corrosion resistance of materials?

    Tantalum carbide coating is a commonly used surface treatment technology that can significantly improve the corrosion resistance of materials. Tantalum carbide coating can be attached to the surface of the substrate through different preparation methods, such as chemical vapor deposition, physica...
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