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Why do sidewalls bend during dry etching ?
by admin on 24-12-03
Non-uniformity of ion bombardment Dry etching is usually a process that combines physical and chemical effects, in which ion bombardment is an important physical etching method. During the etching process, the incident angle and energy distribution of ions may be uneven. If the ion incid...
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Introduction to three common CVD technologies
by admin on 24-12-03
Chemical vapor deposition (CVD) is the most widely used technology in the semiconductor industry for depositing a variety of materials, including a wide range of insulating materials, most metal materials and metal alloy materials. CVD is a traditional thin film preparation technology. Its princi...
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Can diamond replace other high-power semiconductor devices?
by admin on 24-11-25
As the cornerstone of modern electronic devices, semiconductor materials are undergoing unprecedented changes. Today, diamond is gradually showing its great potential as a fourth-generation semiconductor material with its excellent electrical and thermal properties and stability under extreme con...
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What is the planarization mechanism of CMP?
by admin on 24-11-25
Dual-Damascene is a process technology used to manufacture metal interconnects in integrated circuits. It is a further development of the Damascus process. By forming through holes and grooves at the same time in the same process step and filling them with metal, the integrated manufacturing of m...
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Graphite with TaC coating
by admin on 24-11-21
I. Process parameter exploration 1. TaCl5-C3H6-H2-Ar system 2. Deposition temperature: According to the thermodynamic formula, it is calculated that when the temperature is greater than 1273K, the Gibbs free energy of the reaction is very low and the reaction is relatively complete. The rea...
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Silicon carbide crystal growth process and equipment technology
by admin on 24-11-21
1. SiC crystal growth technology route PVT (sublimation method), HTCVD (high temperature CVD), LPE (liquid phase method) are three common SiC crystal growth methods; The most recognized method in the industry is the PVT method, and more than 95% of SiC single crystals are grown by the PVT ...
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Preparation and Performance Improvement of Porous Silicon Carbon Composite Materials
by admin on 24-11-13
Lithium-ion batteries are mainly developing in the direction of high energy density. At room temperature, silicon-based negative electrode materials alloy with lithium to produce lithium-rich product Li3.75Si phase, with a specific capacity of up to 3572 mAh/g, which is much higher than the theor...
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Thermal Oxidation of Single Crystal Silicon
by admin on 24-11-13
The formation of silicon dioxide on the surface of silicon is called oxidation, and the creation of stable and strongly adherent silicon dioxide led to the birth of silicon integrated circuit planar technology. Although there are many ways to grow silicon dioxide directly on the surface of silico...
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UV Processing for Fan-Out Wafer-Level Packaging
by admin on 24-11-05
Fan out wafer level packaging (FOWLP) is a cost-effective method in the semiconductor industry. But the typical side effects of this process are warping and chip offset. Despite the continuous improvement of wafer level and panel level fan out technology, these issues related to molding still exi...
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