With the gradual mass production of conductive SiC substrates, higher requirements are put forward for the stability and repeatability of the process. In particular, the control of defects, the small adjustment or drift of the heat field in the furnace, will bring about crystal changes or the increase of defects. In the later period, we must face the challenge of “growing fast, long and thick, and growing up”, in addition to the improvement of theory and engineering, we also need more advanced thermal field materials as support. Use advanced materials, grow advanced crystals.
Improper use of crucible materials, such as graphite, porous graphite, tantalum carbide powder, etc. in the hot field will lead to defects such as increased carbon inclusion. In addition, in some applications, the permeability of porous graphite is not enough, and additional holes are needed to increase the permeability. The porous graphite with high permeability faces the challenges of processing, powder removal, etching and so on.
VET introduces a new generation of SiC crystal growing thermal field material, porous tantalum carbide. A world debut.
The strength and hardness of tantalum carbide are very high, and making it porous is a challenge. Making porous tantalum carbide with large porosity and high purity is a great challenge. Hengpu Technology has launched a breakthrough porous tantalum carbide with large porosity, with a maximum porosity of 75%, leading the world.
Gas phase component filtration, adjustment of local temperature gradient, direction of material flow, control of leakage, etc., can be used. It can be used with another solid tantalum carbide (compact) or tantalum carbide coating from Hengpu Technology to form local components with different flow conductance.
Some components can be reused.
Post time: Jul-14-2023