During the vapor phase epitaxy (VPE) process, the role of the pedestal is to support the substrate and ensure uniform heating during the growth process. Different types of pedestals are suitable for different growth conditions and material systems. The following are some of the commonly used pedestal types in vapor phase epitaxy:
Barrel pedestal
Barrel pedestals are commonly used in horizontal or tilted vapor phase epitaxy systems. They can hold the substrate and allow the gas to flow over the substrate, which helps to achieve uniform epitaxial growth.
Disc-shaped pedestal (vertical pedestal)
Disc-shaped pedestals are suitable for vertical vapor phase epitaxy systems, in which the substrate is placed vertically. This design helps reduce the contact area between the substrate and the susceptor, thereby reducing heat loss and potential contamination.
Horizontal susceptor
Horizontal susceptors are less common in vapor phase epitaxy, but may be used in some specific growth systems to allow epitaxial growth in a horizontal direction.
Monolithic epitaxial reaction susceptor
The monolithic epitaxial reaction susceptor is designed for a single substrate, which can provide more precise temperature control and better thermal isolation, suitable for the growth of high-quality epitaxial layers.
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Post time: Jul-30-2024