Silicon carbide (SiC) is a new compound semiconductor material. Silicon carbide has a large band gap (about 3 times silicon), high critical field strength (about 10 times silicon), high thermal conductivity (approximately 3 times silicon). It is an important next-generation semiconductor material. SiC coatings are widely used in the semiconductor industry and solar photovoltaics. In particular, the susceptors used in the epitaxial growth of LEDs and Si single crystal epitaxy require the use of SiC coating. Due to the strong upward trend of LEDs in the lighting and display industry, and the vigorous development of the semiconductor industry, SiC coating product prospects are very good.
APPLICATION FIELD
Purity,SEM Structure,thickness analysis of SiC coating
The purity of SiC coatings on graphite by using CVD is as high as 99.9995%. Its structure is fcc. The SiC films coated on graphite is (111) oriented as shown in the XRD data (Fig.1) indicating its high crystalline quality. The thickness of the SiC film is very uniform as shown in Fig. 2.
Fig. 2: thickness uniform of SiC films SEM and XRD of beta‐SiC film on graphite
SEM data of CVD SiC thin film, the crystal size is 2~1 Opm
The crystal structure of the CVD SiC film is a face-centered cubic structure, and the film growth orientation is close to 100%
Silicon carbide (SiC) coated base is the best base for single crystal silicon and GaN epitaxy, which is the core component of the epitaxy furnace. The base is a key production accessory for monocrystalline silicon for large integrated circuits. It has high purity, high temperature resistance, corrosion resistance, good air tightness and other excellent material characteristics.
Product application and use
Graphite base coating for single crystal silicon epitaxial growthSuitable for Aixtron machines, etcCoating thickness: 90~150umThe diameter of the wafer crater is 55mm.
Post time: Mar-14-2022