When silicon carbide crystal grows, the “environment” of the growth interface between the axial center of the crystal and the edge is different, so that the crystal stress on the edge i...
Triangular defect
Triangular defects are the most fatal morphological defects in SiC epitaxial layers. A large number of literature reports have shown that the formation of triangular defects is re...
Seven European countries, led by Germany, submitted a written request to the European Commission to reject the EU’s green transport transition goals, reigniting a debate with France over nucl...
Reaction-sintered silicon carbide porcelain has good compressive strength at ambient temperature, heat resistance to air oxidation, good wear resistance, good heat resistance, small coefficient of ...
High purity graphite refers to the carbon content of graphite. 99.99%, widely used in metallurgical industry of high-grade refractory materials and coatings, military industrial fire materials stab...