Vokatra vaovao farany Fandrefesana tsara sy fanoherana ny fanaovana Graphite Semiconductor

Famaritana fohy:

Fampiharana: Parts Semiconductor
fanoherana (μΩ.m): 8-10 Ohm
Porosity (%): 12% Max
Toerana niaviany: Zhejiang, Sina
lafiny namboarina
Habe azo: <=325 harato
Certificate: ISO9001:2015
Habe sy endrika: namboarina


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Vokatra vaovao farany Fandrefesana tsara sy fanoherana ny fanaovana Graphite Semiconductor
Fampiharana: Parts Semiconductor
fanoherana (μΩ.m): 8-10 Ohm
Porosity (%): 12% Max
Toerana niaviany: Zhejiang, Sina
lafiny namboarina
Habe azo: <=325 harato
Certificate: ISO9001:2015
Habe sy endrika: namboarina

Vokatra vaovao farany Fandrefesana tsara sy fanoherana ny fanaovana Graphite Semiconductor

Vokatra vaovao farany Fandrefesana tsara sy fanoherana ny fanaovana Graphite Semiconductor

Vokatra vaovao farany Fandrefesana tsara sy fanoherana ny fanaovana Graphite Semiconductor

Vokatra vaovao farany Fandrefesana tsara sy fanoherana ny fanaovana Graphite Semiconductor

Vokatra vaovao farany Fandrefesana tsara sy fanoherana ny fanaovana Graphite Semiconductor

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