When silicon carbide crystal grows, the “environment” of the growth interface between the axial center of the crystal and the edge is different, so that the crystal stress on the edge i...
Bulgatransgaz, the operator of Bulgaria’s public gas transmission system, has stated that it is in the early stages of developing a new hydrogen infrastructure project that is expected to req...
Tantalum carbide hardness, high melting point, high temperature performance, mainly used as a cemented carbide additive. The thermal hardness, thermal shock resistance and thermal oxidation resista...
The basic process of SiC crystal growth is divided into sublimation and decomposition of raw materials at high temperature, transportation of gas phase substances under the action of temperature gr...
Ningbo Witte Energy Technology Co., Ltd. is a high-tech enterprise established in China, we are professional supply silicon carbide bushing manufacturer and supplier. We focus on new material techn...
In a certain packaging process, packaging materials with different thermal expansion coefficients are used. During the packaging process, the wafer is placed on the packaging substrate, and then he...