SiC coating graphite MOCVD Wafer carriers， Graphite Susceptores pro SiC Epitaxy

Brevis descriptio:

SiC coating of Graphite substrate for semiconductor applications partem producit cum puritate et resistentia ad atmosphaeram oxidificationis. CVD SiC vel CVI SiC applicatur Graphite partium designationis simplicium vel complexarum. Pinguis variis crassitudinibus et partibus amplissimis applicari potest.

Originis loco:Zhejiang, China (Mainland)

Exemplar Number:Exemplar Number:

Compositio chemica:SiC graphite iactaret

Vires flexiles:470Mpa

Scelerisque conductivity:300 W/mK

Qualitas:Perfectum

Munus:CVD-SiC

Applicatio:Semiconductor /Photovoltaic

Densitas:3.21 g/cc

Scelerisque dilatatio:4 10-6/K

Cineres: <5ppm

Sample:Avaliable

HS Codicis;6903100000

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Product Detail

Product Tags

SiC coating graphite MOCVD Wafer carriers， Graphite Susceptores forSiC Epitaxy,
Ipsum commeatus susceptores, Graphite epitaxy susceptores, Graphite subsidium subiecta, MOCVD Susceptor, SiC Epitaxy, Susceptores laganum,

Praecipua commoda susceptores nostri SiC-graphite susceptores includunt altissimam puritatem, homogeneam efficiens et optimam servitii vitam. Magnam etiam habent resistentiam chemicam et proprietates scelerisque stabilitatis.

SiC coating of Graphite substrate for semiconductor applications partem producit cum puritate et resistentia ad atmosphaeram oxidificationis.
CVD SiC vel CVI SiC applicatur Graphite partium designationis simplicium vel complexarum. Pinguis variis crassitudinibus et partibus amplissimis applicari potest.

SiC coating/octedt MOCVD Susceptor

Features:
· Praeclara scelerisque Concursores Repugnantia
· Praeclara corporis Concursores Repugnantia
· Optime Chemical Resistentia
· Super High Purity
· Availability in Complex Shape
· Usabilis sub atmosphaera Oxidizing

Applicatio:

Typical Proprietates Base Graphite Material:

Densitas apparentis:	1.85 g/cm3
Resistivity electrica:	11 μΩm
Flexurae Strenth:	49 MPa (500kgf/cm2)
Litoris duritia:	58
Cineres:	<5ppm
Scelerisque Conductivity:	116 W/mK (100 kcal/mhr-℃)

Ipsum commeatus susceptoreset graphite componentes omnes reactores epitaxy currenti. Nostra portfolio includit dolium susceptores pro unitatibus applicatis et LPE, subcinericios susceptores LPE, CSD et Gemini unitates, et laganum unum susceptores applicandi et ASM unitates. Coniungendo fortes societates cum ducens OEMs, materiae peritia et fabricando quomodo, SGL. meliorem consilium tuum application offert.