SiC coating of Graphite substrate for semiconductor,Silicon carbide coating, MOCVD Susceptor

SiC coating of Graphite substrated for semiconductor,Silicon carbide coating, MOCVD Susceptor Featured Image

Brevis descriptio:

SiC coating of Graphite substrate for semiconductor applications partem producit cum puritate et resistentia ad atmosphaeram oxidificationis. CVD SiC vel CVI SiC applicatur Graphite partium designationis simplicium vel complexarum. Pinguis variis crassitudinibus et partibus amplissimis applicari potest.

Originis loco:Zhejiang, China (Mainland)

Exemplar Number:Exemplar Number:

Compositio chemica:SiC graphite iactaret

Vires flexiles:470Mpa

Scelerisque conductivity:300 W/mK

Qualitas:Perfectum

Munus:CVD-SiC

Applicatio:Semiconductor /Photovoltaic

Densitas:3.21 g/cc

Scelerisque dilatatio:4 10-6/K

Cineres: <5ppm

Sample:Avaliable

HS Codicis;6903100000

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Product Detail

Product Tags

Sic coating of *Graphite subiecta pro semiconductore,Silicon carbide vestitur;MOCVD Susceptor,
Graphite distent, Graphite subiecta pro semiconductore, MOCVD Susceptor, Pii Carbide Coating,

Praecipua commoda susceptores nostri SiC-graphite susceptores includunt altissimam puritatem, homogeneam efficiens et optimam servitii vitam. Magnam etiam habent resistentiam chemicam et proprietates scelerisque stabilitatis.

Sic coating of*Graphite subiecta pro semiconductoreapplicationes partem cum puritate et repugnantia atmosphaerae oxidizationis producit.
CVD SiC vel CVI SiC applicatur Graphite partium designationis simplicium vel complexarum. Pinguis variis crassitudinibus et partibus amplissimis applicari potest.

SiC coating/octedt MOCVD Susceptor

Features:
· Praeclara scelerisque Concursores Repugnantia
· Praeclara corporis Concursores Repugnantia
· Optime Chemical Resistentia
· Super High Purity
· Availability in Complex Shape
· Usabilis sub atmosphaera Oxidizing

Typical Proprietates Base Graphite Material:

Densitas apparentis:	1.85 g/cm3
Resistivity electrica:	11 μΩm
Flexurae Strenth:	49 MPa (500kgf/cm2)
Litoris duritia:	58
Cineres:	<5ppm
Scelerisque Conductivity:	116 W/mK (100 kcal/mhr-℃)

Carbon commeatus susceptores et graphiticos pro omnibus reactoribus epitaxy currentis. Nostra portfolio includit dolium susceptores pro unitatibus applicatis et LPE, subcinericios susceptores LPE, CSD, et Gemini unitates, et laganum susceptores ad applicandos et ASM unitates. Coniungendo fortes societates cum duce OEMs, materiae peritia et fabricandi modo, SGL meliorem consilium tuum application offert.

SiC coating/octedt MOCVD Susceptor