Ultimas productiones novas bonae levitatis et resistentiae Graphite semiconductoris
| Applicatio: | Semiconductor Partes |
| Resistentia (μΩ.m); | 8-10 Ohm |
| Porositas (%) | 12% Max |
| Originis loco: | Zhejiang, China |
| Dimensiones | nativus |
| Lucrum magnitudine: | <=325mesh |
| Testimonium: | ISO9001:2015 |
| Magnitudo et figura; | nativus |
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