2022 Summum qualitatem MOCVD Susceptor Buy online in Sina, Sic Graphite epitaxy susceptores,
Graphite subsidium subiecta, Graphite Susceptores, Graphite Susceptores pro SiC Epitaxy, Graphite Susceptores pro Silicon, Graphite susceptores Pii carbide coating, INSTRUMENTA GRAPHITE IN SEMICONDUCTOR Graphite Trays Graphite Wafer Susceptores SUMMA MUNDA GRAPHITE tools Opto-electronics, satellite suggestus MOCVD, SiC craticula satellites MOCVD obductis,
Praecipua commoda susceptores nostri SiC-graphite susceptores includunt altissimam puritatem, homogeneam efficiens et optimam servitii vitam. Magnam etiam habent resistentiam chemicam et proprietates scelerisque stabilitatis.
SiC coating of Graphite substrate for semiconductor applications partem producit cum puritate et resistentia ad atmosphaeram oxidificationis.
CVD SiC vel CVI SiC applicatur Graphite partium designationis simplicium vel complexarum. Pinguis variis crassitudinibus et partibus amplissimis applicari potest.
Features:
· Praeclara scelerisque Concursores Repugnantia
· Praeclara corporis Concursores Repugnantia
· Optime Chemical Resistentia
· Super High Purity
· Availability in Complex Shape
· Usabilis sub atmosphaera Oxidizing
Typical Proprietates Base Graphite Material:
Densitas apparentis: | 1.85 g/cm3 |
Resistivity electrica: | 11 μΩm |
Flexurae Strenth: | 49 MPa (500kgf/cm2) |
Litoris duritia: | 58 |
Cineres: | <5ppm |
Scelerisque Conductivity: | 116 W/mK (100 kcal/mhr-℃) |
Carbon commeatus susceptores et graphiticos pro omnibus reactoribus epitaxy currentis. Nostra portfolio includit dolium susceptores pro unitatibus applicatis et LPE, subcinericios susceptores LPE, CSD et Gemini unitates, et laganum unum susceptores applicandi et ASM unitates. Coniungendo fortes societates cum ducens OEMs, materiae peritia et fabricando quomodo, SGL. meliorem consilium tuum application offert.