Gallium arsenido-phosphidis structurae epitaxiales, similes structurae substrati generis ASP productae (ET0.032.512TU), pro. OPIFICIUM cristallum planae rubrae DUXERIT.
Basic technica parametri
ad gallium arsenide-phosphide structurae
| 1, SubstrateGaAs | |
| a. Conductivitytype | electronic |
| b. Resistentia, olim-cm | 0,008 |
| c. Crystal-latticeorientation | (100) |
| d. Superficiem misorientation | (1−3)° |
| 2. Iaculum epitaxiale GaAs1-х Pх | |
| a. Conductivitytype | electronic |
| b. Phosphorus contentus in transitu lavacrum | ex = 0 ad ≈ ≈ 0,4 |
| c. Phosphorus iacuit contentus constante compositione | ≈ 0,4 |
| d. Tabellarius conducit, сm3 | (0,2−3,0)·1017 |
| e. Necem ad maximum of photoluminescens spectrum, nm | 645−673 nm |
| f. Necem ad maximum spectrum electroluminescens | 650−675 nm |
| g. Crassitudo constant iacuit, micron | Saltem VIII nm * |
| h. Layerthickness (totalis), micron | Saltem30 nm * |
| III Tab cum epitaxial layer | |
| a. Declinatio, micron | In summa C um |
| b. Crassitudo, micron | 360−600 um |
| c. Squarecentimeter | Saltem VI cm2 |
| d. Imprimis intensio luminosa (post diffusionemZn), cd/amp | Saltem 0,05 cd/amp |
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