GaN Epitaxy dabere na silicon

Nkọwa dị mkpirikpi:


  • Ebe amụrụ:China
  • Ọdịdị kristal:FCCβ oge
  • Njupụta:3.21 g/cm
  • Isi ike:2500 Vickers
  • Nha ọka:2 ~ 10μm
  • Ọcha kemịkalụ:99.99995%
  • Ike okpomọkụ:640J·kg-1·K-1
  • Okpomọkụ Sublimation:2700 ℃
  • Ike Felexural:415 Mpa (RT 4-point)
  • Modul nke Young:430 Gpa (4pt gbagọọ, 1300 ℃)
  • Mgbasa ọkụ (CTE):4.5 10-6K-1
  • Nrụpụta ọkụ:300 (W/MK)
  • Nkọwa ngwaahịa

    Mkpado ngwaahịa

    Nkọwa ngwaahịa

    Ụlọ ọrụ anyị na-enye ọrụ usoro mkpuchi SiC site na usoro CVD n'elu graphite, ceramics na ihe ndị ọzọ, nke mere na gas pụrụ iche nwere carbon na silicon na-emeghachi omume na okpomọkụ dị elu iji nweta mkpụrụ ndụ SiC dị ọcha, ụmụ irighiri ihe ndị a na-edebe n'elu ihe ndị a na-ekpuchi, na-akpụ oyi akwa mkpuchi SIC.

    Isi atụmatụ:

    1. Nguzogide oxidation dị elu:

    Nguzogide oxidation ka dị ezigbo mma mgbe okpomọkụ dị elu dị ka 1600 C.

    2. Nnukwu ịdị ọcha: nke a na-eme site na ntinye mmiri kemịkalụ n'okpuru ọnọdụ chlorination dị elu.

    3. Nguzogide nbibi: elu ike, kọmpat elu, ezigbo ahụ.

    4. Nguzogide corrosion: acid, alkali, nnu na organic reagents.

    Nkọwa isi nke mkpuchi CVD-SIC

    Njirimara SiC-CVD

    Ọdịdị kristal FCC β oge
    Njupụta g/cm ³ 3.21
    Isi ike Vickers isi ike 2500
    Nha ọka μm 2 ~ 10
    Ịdị ọcha kemịkalụ % 99,99995
    Ike ikpo ọkụ J·kg-1 · K-1 640
    Sublimation okpomọkụ 2700
    Ike Felexural MPa (RT 4-isi) 415
    Modul nke Young GPA (4pt gbagọọ, 1300 ℃) 430
    Mgbasawanye okpomọkụ (CTE) 10-6K-1 4.5
    Thermal conductivity (W/mK) 300

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