The incredibly ọgaranya oru ngo management ahụmahụ na onye ka 1 ọrụ nlereanya na-eme ka substantial mkpa nke nzukọ nkwurịta okwu na anyị mfe nghọta nke gị na-atụ anya maka ọkachamara China China Sic Boat na-ebu Silicon Wafers n'ime The High okpomọkụ Diffusion mkpuchi mkpuchi Tube, Our Ultimate goal is always is always. inye ọkwa dị ka akara kacha elu yana idukwa dịka onye ọsụ ụzọ n'ubi anyị. Anyị ji n'aka na ahụmahụ anyị na-arụpụta ihe na imepụta ngwá ọrụ ga-enweta ntụkwasị obi nke ndị ahịa, Chọrọ imekọ ọnụ na ịmepụta ogologo oge ka mma na gị!
Ahụmịhe nchịkwa ọrụ bara ụba nke ukwuu yana ụdị ọrụ mmadụ na otu na-eme ka mkpa nkwukọrịta ọgbakọ dị na nghọta anyị dị mfe maka atụmanya gị maka.China na-ebu Silicon Wafers, Polycrystallie Silicon Wafer, Nabata ihe ọ bụla nke ajụjụ gị na nchegbu maka ngwaahịa anyị. Anyị na-atụ anya ịmalite mmekọrịta azụmahịa ogologo oge na gị n'ọdịnihu dị nso. Kpọtụrụ anyị taa. Anyị bụ ndị mmekọ azụmahịa mbụ dabara na mkpa gị!
NgwaahịaDescription
A na-eji Silicon carbide Wafer Boat eme ihe n'ọtụtụ ebe dị ka onye na-ejide wafer na usoro mgbasa ozi dị elu.
Uru:
Nguzogide okpomọkụ dị elu:eji eme ihe na 1800 ℃
High thermal conductivity:dakọtara na ihe graphite
Isi ike dị elu:ike nke abụọ na-esote diamond, boron nitride
Nguzogide corrosion:acid siri ike na alkali enweghị corrosion na ya, nguzogide corrosion dị mma karịa tungsten carbide na alumina.
Ibu arọ:obere njupụta, nso aluminom
Enweghị nrụrụ: ọnụ ọgụgụ dị ala nke mgbasawanye thermal
Mgbochi ujo okpomọkụ:ọ nwere ike iguzogide mgbanwe okpomọkụ dị nkọ, na-eguzogide ujo okpomọkụ, ma nwee arụmọrụ kwụsiri ike
Njirimara anụ ahụ SiC
Ngwongwo | Uru | Usoro |
Njupụta | 3.21 g/cc | Sink-ese n'elu na nha |
Okpomọkụ akọwapụtara | 0.66 J/g °K | Igwe ọkụ laser gbara agba |
Ike mgbanwe | 450 MPa 560 MPa | Ehulata isi 4, isi isi RT4, 1300° |
Mgbaji siri ike | 2.94 MPa m1/2 | Microindentation |
Isi ike | 2800 | Vicker, ibu 500 g |
Modulus nke na-agbanwe agbanwe | 450 GPa430 | 4 pt gbagọọ, RT4 pt gbagọọ, 1300 Celsius |
Nha ọka | 2-10 µm | SEM |
Njirimara Thermal nke SiC
Nrụpụta okpomọkụ | 250 W/m °K | Laser flash usoro, RT |
Mgbasawanye okpomọkụ (CTE) | 4.5 x 10-6 °K | Okpomọkụ ụlọ ruo 950 Celsius C, silica dilatometer |