Porous Tantalum Carbide Maka SiC Crystal Growth dị ka ihe ọkụkụ ọkụ

Porous Tantalum Carbide Maka SiC Crystal Growth dị ka ihe na-ekpo ọkụ na-egosi onyonyo

Nkọwa dị mkpirikpi:

A na-ejikarị tantalum carbide porous eme ihe maka nhazi nke gas na-eme ka akụkụ nke gas, na-edozi gradient okpomọkụ mpaghara, na-eduzi usoro ntinye ihe, na-achịkwa ntachi, wdg. dị iche iche eruba conductance.

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Nkọwa ngwaahịa

Mkpado ngwaahịa

Mkpuchi TaC bụ ụdị mkpuchi tantalum carbide (TaC) nke a kwadebere site na teknụzụ ntinye ikuku anụ ahụ, ọ nwere njirimara ndị a:

1. High hardness: TaC mkpuchi ike dị elu, na-emekarị nwere ike iru 2500-3000HV, bụ ihe mkpuchi siri ike magburu onwe ya.

2. Yiri nkwụsi ike: mkpuchi TaC na-eguzogide nke ukwuu, nke nwere ike ibelata mmebi na mmebi nke akụkụ igwe n'oge eji.

3. Ezigbo nguzogide okpomọkụ dị elu: mkpuchi TaC nwekwara ike ịnọgide na-arụ ọrụ ya dị mma n'okpuru ọnọdụ okpomọkụ dị elu.

4. Nkwụsi ike nke kemịkal dị mma: mkpuchi TaC nwere ezigbo nkwụsi ike nke kemịkalụ ma nwee ike iguzogide ọtụtụ mmeghachi omume kemịkal, dị ka acids na bases.

碳化钽涂层物理特性物理特性 Njirimara anụ ahụ nke TaC mkpuchi
密度/ Njupụta	14.3 (g/cm³)
比辐射率 / Mgbapụta pụrụ iche	0.3
热膨胀系数 / Ọnụ ọgụgụ mgbasawanye okpomọkụ	6.3 10^-6/K
努氏硬度/ Isi ike (HK)	2000 HK
电阻 / Nguzogide	1 × 10^-5 Ohm*cm
热稳定性 / Thermal kwụsie ike	<2500 ℃
石墨尺寸变化 / Mgbanwe nha eserese	-10 ~ -20 nkeji
涂层厚度 / mkpuchi ọkpụrụkpụ	≥20um ahụkarị uru (35um± 10um)

Ningbo VET Energy Technology Co., Ltd bụ ụlọ ọrụ teknụzụ dị elu na-elekwasị anya na mmepụta na ahịa nke ihe dị elu dị elu, ihe na teknụzụ gụnyere graphite, silicon carbide, ceramics, ọgwụgwọ elu na ihe ndị ọzọ.A na-eji ngwaahịa ndị a eme ihe na fotovoltaic, semiconductor, ike ọhụrụ, metallurgy, wdg.

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