Silicon carbide ihe na njirimara ya

Ngwaọrụ Semiconductor bụ isi nke akụrụngwa ụlọ ọrụ ọgbara ọhụrụ, nke a na-ejikarị na kọmpụta, ngwa elektrọnik ndị ahịa, nkwukọrịta netwọkụ, ngwa elektrọnik na mpaghara ndị ọzọ nke isi, ụlọ ọrụ semiconductor bụ nke mejupụtara ihe anọ bụ isi: sekit jikọtara ọnụ, ngwaọrụ optoelectronic, ngwaọrụ pụrụ iche, ihe mmetụta, nke na-aza ihe karịrị 80% nke sekit agbakwunyere, ọtụtụ mgbe yana semiconductor na sekit jikọtara ọnụ.

Integrated sekit, dị ka ngwaahịa udi bụ tumadi kewara ụzọ anọ: microprocessor, ebe nchekwa, mgbagha ngwaọrụ, simulator akụkụ. Otú ọ dị, na-aga n'ihu na mgbasawanye nke ngwa ubi nke semiconductor ngwaọrụ, ọtụtụ pụrụ iche oge chọrọ semiconductor na-enwe ike rube isi na ojiji nke elu okpomọkụ, ike radieshon, elu ike na ndị ọzọ gburugburu, adịghị emebi, mbụ na nke abụọ ọgbọ nke. ihe semiconductor enweghị ike, ya mere ọgbọ nke atọ nke ihe semiconductor bịara.

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Ugbu a, obosara gbalaga ọdịiche semiconductor ihe na-anọchi anya yasilicon carbide(SiC), gallium nitride (GaN), zinc oxide (ZnO), diamond, aluminom nitride (AlN) na-eji uru dị ukwuu na ahịa ahịa, nke a na-akpọkọta ọnụ dị ka ihe semiconductor ọgbọ nke atọ. Ọgbọ nke atọ nke semiconductor ihe nwere oghere oghere sara mbara, nke dị elu nke ikuku eletrik na-emebi emebi, conductivity thermal, eletrọnịkị jupụta ọnụego na ikike dị elu iguzogide radieshon, dabara adaba maka ime elu okpomọkụ, ugboro ugboro, iguzogide radieshon na ngwaọrụ ike dị elu. , nke a na-akpọkarị obosara bandgap semiconductor ihe (obosara mmachibido iwu karịrị 2.2 eV), nke a na-akpọkwa okpomọkụ dị elu ihe ndị semiconductor. Site na nyocha ugbu a na ihe na ngwaọrụ semiconductor ọgbọ nke atọ, silicon carbide na gallium nitride semiconductor ihe tozuru oke, yanateknụzụ silicon carbidebụ nke kachasị tozuru okè, ebe nyocha na zinc oxide, diamond, aluminum nitride na ihe ndị ọzọ ka dị na mmalite mbụ.

Akụrụngwa na akụrụngwa ha:

Silicon carbideA na-ejikarị ihe eji eme ihe na seramiiki bọọlụ, valvụ, ihe semiconductor, gyros, ihe atụ, ikuku ikuku na mpaghara ndị ọzọ, aghọwo ihe a na-apụghị dochie anya n'ọtụtụ ụlọ ọrụ mmepụta ihe.

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SiC bụ ụdị nke superlatice eke na ụdị polytype a na-ahụkarị. Enwere ihe karịrị 200 (nke a maara ugbu a) ezinụlọ polytypic homotypic n'ihi ọdịiche dị n'usoro nchịkọta dị n'etiti Si na C diatomic layers, nke na-eduga n'ụdị kristal dị iche iche. Ya mere, SiC dị nnọọ mma maka ọgbọ ọhụrụ nke ìhè emitting diode (LED) substrate material, ike eletriki ihe dị elu.

njirimara

ihe onwunwe

Isi ike dị elu (3000kg / mm), nwere ike belata ruby
Nguzogide iyi dị elu, nke abụọ na diamond
Thermal conductivity bụ 3 ugboro elu karịa nke Si na 8 ~ 10 ugboro elu karịa nke GaAs.
Nkwụsi ike nke okpomọkụ nke SiC dị elu ma ọ gaghị ekwe omume ịgbaze na nrụgide ikuku
Ịrụ ọrụ nkwụsị ọkụ dị mma dị ezigbo mkpa maka ngwaọrụ ndị dị elu
 

 

ihe onwunwe kemịkalụ

Nguzogide corrosion siri ike nke ukwuu, na-eguzogide ihe fọrọ nke nta ka ọ bụrụ onye ọ bụla na-emebi emebi mara na ụlọ okpomọkụ
SiC elu na-adị mfe oxidizes ka ọ bụrụ SiO, oyi akwa dị mkpa, nwere ike igbochi oxidation ya ọzọ, na N'elu 1700 ℃, ihe nkiri oxide na-agbaze na oxidizes ngwa ngwa
Ihe mgbochi nke 4H-SIC na 6H-SIC dị ihe dị ka ugboro atọ nke Si yana ugboro abụọ nke GaAs: Mgbasa ọkụ eletrik dị elu bụ usoro dị elu karịa Si, yana ike ịnyagharị elektrọn juputara. Ugboro abụọ na ọkara nke Si. Ihe mgbochi nke 4H-SIC sara mbara karịa nke 6H-SIC

Oge nzipu: Ọgọst-01-2022
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