mkpuchi sic Silicon carbide mkpuchi SiC mkpuchi nke mkpụrụ osisi Graphite maka Semiconductor

SiC nwere ezigbo anụ ahụ na kemịkalụ, dị ka ebe mgbaze dị elu, ike siri ike, nguzogide corrosion na nguzogide oxidation. Karịsịa na nso nke 1800-2000 ℃, SiC nwere ezigbo mgbochi ablation. Ya mere, ọ nwere atụmanya ngwa sara mbara na mbara igwe, akụrụngwa ngwá agha na mpaghara ndị ọzọ. Agbanyeghị, enweghị ike iji SiC n'onwe ya dịkaihe owuwuihe onwunwe,ya mere a na-ejikarị usoro mkpuchi ahụ eme ihe iji mee ihe na-eyi ya na mgbochi ablationce.

Silicon carbide(SIC) ihe semiconductor bụ ọgbọ nke atọ semiconductor ihe na-emepụta mgbe mbụ ọgbọ element semiconductor ihe (Si, GE) na ọgbọ nke abụọ compound semiconductor ihe (GaAs, ọdịiche, InP, wdg). Dị ka a wide band gap semiconductor material, silicon carbide nwere njiri mara nke nnukwu oghere obosara, nnukwu mmebi ubi, ike ikuku dị elu, nnukwu ụgbọ mmiri saturation ọsọ ọsọ, obere dielectric mgbe niile, nkwụsi ike radieshon na nkwụsi ike kemịkalụ dị mma. Enwere ike iji ya rụọ ọrụ dị iche iche dị elu na ike dị elu na-eguzogide okpomọkụ dị elu ma nwee ike iji ya mee ihe n'oge ebe ngwaọrụ silicon na-enweghị ike, ma ọ bụ na-emepụta mmetụta nke ngwaọrụ silicon siri ike ịmepụta na ngwa ngwa n'ozuzu.

Main ngwa: eji maka waya ọnwụ nke 3-12 inch monocrystalline silicon, polycrystalline silicon, potassium arsenide, quartz crystal, wdg Engineering nhazi ihe maka anyanwụ photovoltaic ụlọ ọrụ, semiconductor ụlọ ọrụ na piezoelectric crystal ụlọ ọrụ.Eji yasemiconductor, mkpanaka ọkụ, ihe sekit, ngwa okpomọkụ dị elu, onye na-achọpụta ultraviolet, ihe nhazi, astronomy, diski breeki, clutch, diesel particulate filter, filament pyrometer, seramiiki ihe nkiri, ngwá ọrụ ịkpụ, ihe ọkụkụ, mmanụ nuklia, ọla, ígwè, ihe nchebe, nkwado catalyst na ubi ndị ọzọ