ire ọkụ China Mirror Polish Silicon Carbide Nitride Ceramic Rod Si3n4 Ceramic Tube

Ọrịre na-ekpo ọkụ China Mirror Polish Silicon Carbide Nitride Ceramic Rod Si3n4 Ceramic Tube Featrated Image

Nkọwa dị mkpirikpi:

Ngwakọta kemịkalụ: Silicon Carbide

Isi ike: ≥110 HS

Njupụta: 3.10-3.15 g/cm3

Ike na-ehulata:> 350MPa

Nrụpụta ọkụ:>120

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Nkọwa ngwaahịa

Mkpado ngwaahịa

Our company aims to operating faithfully, serving to all of our customers , and working in new technology and new machine always for Hot sale China Mirror Polish Silicon Carbide Nitride Ceramic Rod Si3n4 Ceramic Tube , Are you still seek for a high quality product that is in according together with your good corporation image while expanding your product or service range? Gbalịa mee ihe ngwọta anyị dị elu. Nhọrọ gị ga-egosi na ị nwere ọgụgụ isi!
Anyị ụlọ ọrụ aims na-arụ ọrụ ikwesị ntụkwasị obi, na-ejere ndị ahịa anyị niile ozi, na-arụ ọrụ na nkà na ụzụ ọhụrụ na igwe ọhụrụ mgbe niile makaSilicon nitride nke China, Si3n4 Rod, Anyị na-na na mgbe niile siri ọnwụ na evolushọn nke ngwọta, nọrọ ezigbo ego na mmadụ akụ na nkà na ụzụ upgrading, na ikwado mmepụta mma, izute chọrọ nke atụmanya si mba na mpaghara niile.
Silicon Carbide Ceramic Bushing Sintered

silicon carbide na-enweghị nrụgide (SSIC)a na-emepụta site na iji ezigbo ntụ ntụ SiC nwere ihe mgbakwunye sintering. A na-edozi ya site na iji usoro nhazi nke a na-ahụkarị maka ceramics ndị ọzọ na sintered na 2,000 ruo 2,200 ° C na ikuku ikuku gas na-adịghị mma. yana nsụgharị ndị mara mma, nke nwere oke ọka <5 um, ụdị ndị na-enweghị isi nke nwere oke ọka ruru 1.5 mm dị.

SSIC dị iche site na ike dị elu nke na-anọkarị mgbe niile ruo oke okpomọkụ (ihe dịka 1,600 Celsius C), na-ejigide ike ahụ ogologo oge!

Uru ngwaahịa:

Nguzogide oxidation dị elu

Nguzogide corrosion mara mma

Ezigbo nguzogide abrasion

Ọnụ ọgụgụ dị elu nke conductivity okpomọkụ
Mmanya onwe onye, obere njupụta
Isi ike dị elu
Nhazi ahaziri ahazi.

Njirimara nka

Ihe	Nkeji	Data
Isi ike	HS	≥110
Ọnụọgụ porosity	%	<0.3
Njupụta	g/cm3	3.10-3.15
Mkpakọ	MPa	>2200
Ike Fractural	MPa	>350
Ọnụọgụ nke mgbasawanye	10/°C	4.0
Ọdịnaya nke Sic	%	≥99
Thermal conductivity	W/mk	>120
Modul na-agbanwe	GPA	≥400
Okpomọkụ	Celsius C	1380