Hot sale China Mirror Polish Silicon Carbide Nitride Ceramic Rod Si3n4 Ceramic Tube

Short Description:

Chemical Composition:Silicon Carbide

Hardness:≥110 HS

Density:3.10-3.15 g/cm3

Bending Strength:>350MPa

Thermal conductivity:>120

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Our company aims to operating faithfully, serving to all of our customers , and working in new technology and new machine constantly for Hot sale China Mirror Polish Silicon Carbide Nitride Ceramic Rod Si3n4 Ceramic Tube, Are you still seeking for a high quality product that is in accordance together with your good corporation image while expanding your product or service range? Try out our high-quality solutions. Your choice will prove for being intelligent!
Our company aims to operating faithfully, serving to all of our customers , and working in new technology and new machine constantly for China Silicon Nitride, Si3n4 Rod, We’ve got constantly insisted on the evolution of solutions, spent good funds and human resource in technological upgrading, and facilitate production improvement, meeting the wants of prospects from all countries and regions.
Sintered Silicon Carbide Ceramic Bushing

Pressureless sintered silicon carbide (SSIC) is produced using very fine SiC powder containing sintering additives. It is processed using forming methods typical for other ceramics and sintered at 2,000 to 2,200° C in an inert gas atmosphere.As well as fine-grained versions, with grain sizes < 5 um, coarse-grained versions with grain sizes of up to 1.5 mm are available.

SSIC is distinguished by high strength that stays nearly constant up to very high temperatures (approximately 1,600° C), maintaining that strength over long periods!

Product advantages:

High temperature oxidation resistance

Excellent Corrosion resistance

Good Abrasion resistance

High coefficient of heat conductivity
Self-lubricity, low density
High hardness
Customized design.

Technical properties:

Items	Unit	Data
Hardness	HS	≥110
Porosity Rate	%	<0.3
Density	g/cm3	3.10-3.15
Compressive	MPa	>2200
Fractural Strength	MPa	>350
Coefficient of expansion	10/°C	4.0
Content of Sic	%	≥99
Thermal conductivity	W/m.k	>120
Elastic Modulus	GPa	≥400
Temperature	°C	1380