KhoomDsau ntawv
Silicon carbide Wafer Nkoj tau dav siv los ua tus tuav wafer hauv cov txheej txheem kub diffusion.
Qhov zoo:
Kub kub kuj:ib txwm siv ntawm 1800 ℃
High thermal conductivity:sib npaug rau cov khoom siv graphite
Siab hardness:hardness thib ob tsuas yog pob zeb diamond, boron nitride
Corrosion kuj:muaj zog acid thiab alkali tsis muaj corrosion rau nws, corrosion kuj zoo dua tungsten carbide thiab alumina.
Lub teeb nyhav:tsawg ntom, ze rau aluminium
Tsis muaj deformation: tsawg coefficient ntawm thermal expansion
Thermal shock tsis kam:nws tuaj yeem tiv taus qhov kub thiab txias hloov, tiv thaiv thermal shock, thiab muaj kev ua haujlwm ruaj khov
Physical Properties Of SiC
| Khoom | Tus nqi | Txoj kev |
| Qhov ntom | 3.21 g / cc | Sink-float thiab dimension |
| Tshwj xeeb kub | 0.66 J / g ° K | Pulsed laser flash |
| Flexural zog | 450 MPa 560 MPa | 4 taw tes khoov, RT4 taw tes khoov, 1300 ° |
| Fracture toughness | 2.94 MPa m1/2 | Microindentation |
| Hardness | 2800 | Vicker's, 500g load |
| Elastic ModulusYoung's Modulus | 450 GPa 430 GPa | 4 pt khoov, RT4 pt khoov, 1300 ° C |
| Cov qoob loo loj | 2-10 µm | SEM |
Thermal Properties ntawm SiC
| Thermal conductivity | 250 W / m ° K | Laser flash method, RT |
| Thermal Expansion (CTE) | 4.5 x 10-6 ° K | Chav ntsuas kub txog 950 ° C, silica dilatometer |
