Silicon carbide carrier taisis a tus yuam sijfeem siv nyob rau hauv ntau yam semiconductor manufacturing txheej txheem.Peb siv peb cov cuab yeej patented los ua cov khoom siv silicon carbide nrogpurity siab heev,zootxheejtsis sib xwsthiab lub neej kev pabcuam zoo heev, zoo lisiab tshuaj tiv thaiv thiab thermal stability zog.
VET Energy yog tustiag tiag chaw tsim tshuaj paus ntawm customized graphite thiab silicon carbide khoom nrog CVD txheej,tuaj yeem muab tauntau yamcustomized qhov chaw rau semiconductor thiab photovoltaic kev lag luam. Our pab neeg ua haujlwm los ntawm cov tsev kawm tshawb fawb sab saum toj, tuaj yeem muab cov kev daws teeb meem zoo tshaj plawsrau koj.
Peb tsis tu ncua tsim cov txheej txheem siab heev los muab cov ntaub ntawv siab dua,thiabtau ua haujlwm tawm cov cuab yeej tshwj xeeb patented, uas tuaj yeem ua rau kev sib txuas ntawm cov txheej thiab cov substrate nruj dua thiab tsis tshua muaj detachment.
Fnoj ntawm peb cov khoom:
1. Kub kub oxidation tsis kam mus txog 1700℃.
2. High purity thiabthermal uniformity
3. Zoo heev corrosion kuj: acid, alkali, ntsev thiab organic reagents.
4. High hardness, compact nto, zoo hais.
5. Lub neej ua haujlwm ntev dua thiab ruaj khov dua
| CVD SiC薄膜基本物理性能 Basic Physical Properties ntawm CVD SiCtxheej | |
| 性质 / Khoom | 典型数值 / Tus nqi |
| 晶体结构 / Crystal Structure | FCC β theem多晶, 主要为(111) Ib |
| 密度 / Ceev | 3.21 g / cm³ |
| 硬度 / Hardness | 2500 维氏硬度 (500g load) |
| 晶粒大小 / Grain SiZe | 2 ~ 10 hli |
| 纯度 / Tshuaj Purity | 99.99995% |
| Cov duab / Kub Muaj Peev Xwm | 6 40j kg-1· K-1 |
| 升华温度 / Sublimation kub | 2700 ℃ |
| 抗弯强度 / Flexural zog | 415 MPa RT 4-point |
| 杨氏模量 / Young's Modulus | 430 Gpa 4pt khoov, 1300 ℃ |
| 导热系数 / KublKev coj ua | 300 Wm-1· K-1 |
| 热膨胀系数 / Thermal Expansion (CTE) | 4.5 × 10-6K-1 |
Zoo siab txais tos koj tuaj xyuas peb lub Hoobkas, cia peb tham ntxiv!
