High Purity 8 Inch Silicon Wafer

Short Description:

VET Energy’s high-purity 8-inch silicon wafers are your ideal choice for semiconductor manufacturing. Made using advanced technology, these wafers have excellent crystal quality and surface flatness, making them suitable for the manufacture of a variety of microelectronic devices.


Product Detail

Product Tags

VET Energy's 8-inch silicon wafers are widely used in power electronics, sensors, integrated circuits and other fields. As a leader in the semiconductor industry, we are committed to providing high-quality Si Wafer products to meet the growing needs of our customers.

In addition to Si Wafer, VET Energy also provides a wide range of semiconductor substrate materials, including SiC Substrate, SOI Wafer, SiN Substrate, Epi Wafer, etc. Our product line also covers new wide bandgap semiconductor materials such as Gallium Oxide Ga2O3 and AlN Wafer, providing strong support for the development of next-generation power electronic devices.

VET Energy has advanced production equipment and a complete quality management system to ensure that each wafer meets strict industry standards. Our products not only have excellent electrical properties, but also have good mechanical strength and thermal stability.

VET Energy provides customers with customized wafer solutions, including wafers of different sizes, types and doping concentrations. In addition, we also provide professional technical support and after-sales service to help customers solve various problems encountered during the production process.

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WAFERING SPECIFICATIONS

*n-Pm=n-type Pm-Grade,n-Ps=n-type Ps-Grade,Sl=Semi-lnsulating

Item

 8-Inch

6-Inch

 4-Inch

n-P

n-Pm

n-Ps

SI

SI

TTV(GBIR)

≤6um

≤6um

Bow(GF3YFCD)-Absolute Value

≤15μm

≤15μm

≤25μm

≤15μm

Warp(GF3YFER)

≤25μm

≤25μm

≤40μm

≤25μm

LTV(SBIR)-10mmx10mm

<2μm

Wafer Edge

Beveling

SURFACE FINISH

*n-Pm=n-type Pm-Grade,n-Ps=n-type Ps-Grade,Sl=Semi-lnsulating

Item

8-Inch

6-Inch

4-Inch

n-P

n-Pm

n-Ps

SI

SI

Surface Finish

Double side Optical Polish,Si- Face CMP

SurfaceRoughness

(10um x 10um) Si-FaceRa≤0.2nm
C-Face Ra≤ 0.5nm

(5umx5um) Si-Face Ra≤0.2nm
C-Face Ra≤0.5nm

Edge Chips

None Permitted (length and width≥0.5mm)

Indents

None Permitted

Scratches(Si-Face)

Qty.≤5,Cumulative
Length≤0.5×wafer diameter

Qty.≤5,Cumulative
Length≤0.5×wafer diameter

Qty.≤5,Cumulative
Length≤0.5×wafer diameter

Cracks

None Permitted

Edge Exclusion

3mm

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