SiC substrates mea o LED epitaxial wafer ulu, SiC Coated Graphite Carriers

He mea koʻikoʻi nā ʻāpana graphite maʻemaʻe kiʻekiʻenā kaʻina hana i ka semiconductor, LED a me ka ʻoihana lā. ʻO kā mākou hāʻawi ʻana mai nā mea hoʻohana graphite no nā wahi wela e ulu ana ke aniani (heaters, crucible susceptors, insulation), a hiki i nā ʻāpana graphite kiʻekiʻe no nā mea hana wafer, e like me nā susceptors graphite i uhi ʻia i ka silicon carbide no Epitaxy a i ʻole MOCVD. ʻO kēia kahi e pāʻani ai kā mākou graphite kūikawā: ʻo ka isostatic graphite ke kumu no ka hana ʻana i nā papa semiconductor compound. Hoʻokumu ʻia kēia ma ka "hot zone" ma lalo o nā mahana wela i ka wā i kapa ʻia ʻo epitaxy, a i ʻole ka hana MOCVD. ʻO ka mea lawe kaʻa kaʻa kahi i uhi ʻia ai nā wafers i loko o ka reactor, ʻo ia ka silicon carbide-coated isostatic graphite. ʻO kēia wale nō maʻemaʻe, homogeneous graphite e hoʻokō i nā koi kiʻekiʻe i ke kaʻina hana uhi.

TʻO ia ke kumu kumu o ka ulu ʻana o LED epitaxial wafer: ma kahi pāpaʻi (ʻo ka nui o ka sapphire, SiC a me Si) i hoʻomehana ʻia i kahi mahana kūpono, lawe ʻia ka mea kinoea InGaAlP i ​​ka ʻili substrate ma ke ʻano hoʻomalu e ulu i kahi kiʻiʻoniʻoni aniani hoʻokahi. I kēia manawa, ʻo ka ʻenehana ulu ʻana o ka LED epitaxial wafer e hoʻohana nui i ka hoʻoheheʻe ʻana i ka mahu metala.
LED epitaxial substrate meaʻo ia ka pōhaku kihi o ka hoʻomohala ʻenehana o ka ʻoihana kukui semiconductor. Pono nā ʻenehana substrate ʻokoʻa i ka ʻenehana ulu epitaxial wafer ulu, ʻenehana hana chip a me nā ʻenehana hoʻopihapiha. Hoʻoholo nā mea substrate i ke ala hoʻomohala o ka ʻenehana kukui semiconductor.

7 3 9

ʻO nā hiʻohiʻona o ka LED epitaxial wafer substrate koho mea:

1. ʻO ka mea epitaxial ka mea like a like paha me ka substrate, liʻiliʻi liʻiliʻi mau mismatch, crystallinity maikaʻi a me ka haʻahaʻa kīnā haʻahaʻa.

2. ʻO nā hiʻohiʻona pili maikaʻi, kūpono i ka nucleation o nā mea epitaxial a me ka hoʻopili ikaika

3. He paʻa kemika maikaʻi kona a ʻaʻole maʻalahi e decompose a ʻino i ka mahana a me ka lewa o ka ulu epitaxial

4. Hana maikaʻi ka wela, e komo pū me ka conductivity thermal maikaʻi a me ka mismatch haʻahaʻa haʻahaʻa

5. ʻO ka conductivity maikaʻi, hiki ke hana ʻia i luna a me lalo o ka hale 6, maikaʻi ka hana optical, a ʻo ka māmā i hoʻokuʻu ʻia e ka mea i hana ʻia ʻaʻole i komo ʻia e ka substrate.

7. ʻO nāʻano mechanical maikaʻi a me ka hana maʻalahi o nā mea hana, me ka lahilahi, ka poli a me kaʻokiʻana

8. Kumukuai haahaa.

9. Nui nui. ʻO ka maʻamau, ʻaʻole e emi ke anawaena ma mua o 2 iniha.

10. He mea ma'alahi ka loa'a 'ana o ka substrate ma'amau (koe na'e he mau koi kūikawā 'ē a'e), a 'o ke 'ano o ka substrate e like me ka puka pā o nā mea hana epitaxial, 'a'ole ma'alahi ka hana 'ana i ka au irregular eddy, i mea e ho'opilikia ai i ka maika'i o ka epitaxial.

11. Ma ke kumu o ka hoʻopili ʻole ʻana i ka maikaʻi o ka epitaxial, e hoʻokō ka machinability o ka substrate i nā koi o ka chip ma hope a me ka hoʻoili ʻana i ka pahu i ka hiki.

He mea paʻakikī loa ke koho ʻana i ka substrate e hoʻokō i nā ʻano he ʻumikumamākahi i luna i ka manawa like. No laila, i kēia manawa, hiki iā mākou ke hoʻololi wale i ka R & D a me ka hana ʻana i nā mea uila semiconductor light-emitting ma nā substrates like ʻole ma o ka hoʻololi ʻana o ka ʻenehana ulu epitaxial a me ka hoʻoponopono ʻana i ka ʻenehana hana ʻenehana. Nui nā mea pani no ka noiʻi gallium nitride, akā ʻelua wale nō substrate hiki ke hoʻohana ʻia no ka hana ʻana, ʻo ia hoʻi ka sapphire Al2O3 a me ka silicon carbide.SiC substrates.


Ka manawa hoʻouna: Feb-28-2022
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