ʻO ka uhi ʻana o ka silikoni ka uhi ʻia ʻo SiC i uhi ʻia o ka substrate Graphite no Semiconductor

Loaʻa i ka SiC nā waiwai kino a me nā kemika, e like me ke kiʻekiʻe heheʻe, ka paʻakikī kiʻekiʻe, ka pale ʻana i ka corrosion a me ke kūpaʻa oxidation. ʻOi loa ma ka laulā o 1800-2000 ℃, SiC maikaʻi ke kū'ē ablation. No laila, loaʻa iā ia nā manaʻo hoʻohana ākea i ka aerospace, nā mea kaua a me nā kahua ʻē aʻe. Eia naʻe, ʻaʻole hiki ke hoʻohana ʻia ʻo SiC ponoʻīhe mea hanamea,No laila, hoʻohana pinepine ʻia ke ʻano o ka uhi ʻana e hoʻohana i kona pale ʻana a me ka pale ablationce.

Silicon carbide(SIC) semiconductor mea ke kolu o ka hanauna seUa hoʻomohala ʻia nā mea miconductor ma hope o ka mea hana semiconductor element mua (Si, GE) a me ka lua o ka hanauna semiconductor material (GaAs, gap, InP, etc.). Ma ke ʻano he mea semiconductor ākea ākea, loaʻa ka silicon carbide i nā hiʻohiʻona o ka laulā ākea ākea, kiʻekiʻe breakdown kahua ikaika, kiʻekiʻe thermal conductivity, kiʻekiʻe lawe kiʻekiʻe saturation drift wikiwiki, liʻiliʻi liʻiliʻi dielectric mau, ikaika pale pale a me ka paʻa kemika maikaʻi. Hiki ke hoʻohana ʻia no ka hana ʻana i nā ʻano mea hana kiʻekiʻe kiʻekiʻe a me nā mana kiʻekiʻe me ke kūpaʻa wela kiʻekiʻe a hiki ke hoʻohana ʻia i nā manawa i kūpono ʻole nā ​​mea silika, A i ʻole e hoʻopuka i ka hopena i paʻakikī nā mea silika e hana i nā noi maʻamau.

Hoʻohana nui: hoʻohana ʻia no ka ʻoki ʻana i ka uea o 3-12 iniha monocrystalline silicon, polycrystalline silicon, potassium arsenide, quartz crystal, a me nā mea hana ʻenehana no ka ʻoihana photovoltaic solar, ʻoihana semiconductor a me ka ʻoihana kristal piezoelectric.Hoʻohana ʻia masemiconductor, uila uila, mea kaapuni, noi wela kiʻekiʻe, mea ʻike ultraviolet, mea hoʻolālā, astronomy, disc brake, clutch, diesel particulate filter, filament pyrometer, ceramic film, mea ʻoki ʻoki, mea hoʻomehana, wahie nuklea, mea nani, kila, mea pale, kākoʻo catalyst a me nā kahua ʻē aʻe