SiC shafi graphite MOCVD Wafer dillalai, Graphite Susceptors donSiC Epitoxy,
Carbon yana samar da abubuwan sha, Graphite epitaxy susceptors, Graphite goyon bayan substrates, Mai Rarraba MOCVD, SiC Epitoxy, Wafer Susceptors,

Fa'idodi na musamman na masu ɗaukar hoto na SiC-mai rufi sun haɗa da tsaftar tsafta, rufin kamanni da kyakkyawar rayuwar sabis. Suna kuma da babban juriya na sinadarai da kaddarorin kwanciyar hankali na thermal.

Rufin SiC na ginshiƙi na Graphite don aikace-aikacen Semiconductor yana samar da wani yanki tare da mafi girman tsabta da juriya ga yanayin iskar oxygen.
Ana amfani da CVD SiC ko CVI SiC zuwa Graphite na sassa na ƙira mai sauƙi ko hadaddun. Ana iya amfani da sutura a cikin kauri daban-daban kuma zuwa manyan sassa.

Siffofin:
· Kyakkyawan Juriya na Shock Thermal
· Kyakkyawan juriya na girgiza jiki
· Kyakkyawan Juriya na Chemical
· Super High Tsafta
· Samuwar a cikin Siffar Maɗaukaki
Ana iya amfani da shi a ƙarƙashin Oxidizing Atmosphere

Aikace-aikace:

Abubuwan Haɓaka na Kayan Gilashin Gindi:

Carbon yana samar da abubuwan shada graphite aka gyara ga duk na yanzu epitaxy reactors. Fayil ɗin mu ya haɗa da masu ɗaukar ganga don amfani da raka'a na LPE, pancake susceptors don LPE, CSD, da Gemini raka'a, da guda-wafer susceptors don aikace-aikace da kuma ASM raka'a.By hada karfi da haɗin gwiwa tare da manyan OEMs, kayan gwaninta da kuma masana'antu sani-how, SGL yana ba da mafi kyawun ƙira don aikace-aikacen ku.