SiC mai rufi naGraphite substrate don Semiconductor, Silicon carbide shafi,Mai Rarraba MOCVD,
Graphite substrate, Graphite substrate don Semiconductor, Mai Rarraba MOCVD, Rufin Silicon Carbide,
Fa'idodi na musamman na masu ɗaukar hoto na SiC-mai rufi sun haɗa da tsaftar tsafta, rufin kamanni da kyakkyawar rayuwar sabis. Suna kuma da babban juriya na sinadarai da kaddarorin kwanciyar hankali na thermal.
SiC shafi naGraphite substrate don Semiconductoraikace-aikace na samar da wani sashi tare da mafi girman tsarki da juriya ga yanayin iskar oxygen.
Ana amfani da CVD SiC ko CVI SiC zuwa Graphite na sassa na ƙira mai sauƙi ko hadaddun. Ana iya amfani da sutura a cikin kauri daban-daban kuma zuwa manyan sassa.
Siffofin:
· Kyakkyawan Juriya na Shock Thermal
· Kyakkyawan juriya na girgiza jiki
· Kyakkyawan Juriya na Chemical
· Super High Tsafta
· Samuwar a cikin Siffar Maɗaukaki
Ana iya amfani da shi a ƙarƙashin Oxidizing Atmosphere
Abubuwan Haɓaka na Kayan Gilashin Gindi:
Yawaita Bayyana: | 1.85 g/cm 3 |
Juriya na Lantarki: | 11 μΩm |
Ƙarfin Ƙarfi: | 49 MPa (500kgf/cm2) |
Taurin Teku: | 58 |
Ash: | <5ppm |
Ƙarfafa Ƙarfafawa: | 116 W/mK (100 kcal/mhr-℃) |
Carbon yana samar da abubuwan maye da kayan aikin graphite don duk masu sarrafa motsi na yanzu. Fayil ɗin mu ya haɗa da masu ɗaukar ganga don amfani da raka'a na LPE, pancake susceptors don LPE, CSD, da Gemini raka'a, da guda-wafer susceptors don aikace-aikace da kuma ASM raka'a.By hada karfi da haɗin gwiwa tare da manyan OEMs, kayan gwaninta da kuma masana'antu sani-how, SGL yana ba da mafi kyawun ƙira don aikace-aikacen ku.
Ƙarin Kayayyaki