Monocrystalline 8 inch Silicon Wafer

Takaitaccen Bayani:

VET Energy guda kristal 8-inch wafer silicon wafer shine babban tsafta, ingantaccen kayan tushe na semiconductor. VET Energy yana amfani da ci gaba na ci gaban CZ don tabbatar da cewa wafer yana da kyakkyawan ingancin kristal, ƙarancin ƙarancin lahani da babban daidaituwa, yana ba da ingantaccen abin dogaro ga na'urorin semiconductor ku.


Cikakken Bayani

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Monocrystalline 8 Inch Silicon Wafer daga VET Energy mafita ce ta jagorar masana'antu don ƙirƙira na'urorin lantarki da na'urorin lantarki. Bayar da ingantaccen tsari mai tsabta da kristal, waɗannan wafers suna da kyau don aikace-aikacen aiki mai girma a cikin masana'antar hoto da semiconductor. Makamashi na VET yana tabbatar da cewa kowane wafer ana sarrafa shi da kyau don saduwa da ma'auni mafi girma, yana samar da ingantacciyar daidaituwa da ƙarewar ƙasa mai santsi, waɗanda ke da mahimmanci don samar da na'urorin lantarki na ci gaba.

Waɗannan Monocrystalline 8 Inch Silicon Wafers sun dace da kewayon kayan, gami da Si Wafer, SiC Substrate, SOI Wafer, SiN Substrate, kuma sun dace musamman don haɓakar Epi Wafer. Maɗaukakin haɓakar yanayin zafi da kaddarorin lantarki sun sa su zama abin dogaro ga masana'anta mai inganci. Bugu da ƙari, an ƙera waɗannan wafers don yin aiki tare da kayan kamar Gallium Oxide Ga2O3 da AlN Wafer, suna ba da aikace-aikace da yawa daga na'urorin lantarki zuwa na'urorin RF. Wafers kuma sun dace daidai da tsarin Cassette don babban girma, yanayin samarwa mai sarrafa kansa.

Layin samfurin VET Energy bai iyakance ga wafern silicon ba. Har ila yau, muna samar da nau'i-nau'i na kayan haɗin gwiwar semiconductor, ciki har da SiC Substrate, SOI Wafer, SiN Substrate, Epi Wafer, da dai sauransu, da kuma sababbin ƙananan bandgap semiconductor kayan kamar Gallium Oxide Ga2O3 da AlN Wafer. Waɗannan samfuran za su iya biyan buƙatun aikace-aikacen abokan ciniki daban-daban a cikin wutar lantarki, mitar rediyo, firikwensin da sauran filayen.

VET Energy yana ba abokan ciniki mafita na wafer na musamman. Za mu iya siffanta wafers da daban-daban resistivity, oxygen abun ciki, kauri, da dai sauransu bisa ga abokan ciniki' takamaiman bukatun. Bugu da ƙari, muna kuma ba da tallafin fasaha na sana'a da sabis na tallace-tallace bayan-tallace-tallace don taimakawa abokan ciniki su magance matsalolin daban-daban da aka fuskanta yayin aikin samarwa.

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BAYANIN WAFERING

*n-Pm=n-nau'in Pm-Grade,n-Ps=n-nau'in Ps-Grade,Sl=Semi-lnsulating

Abu

8-inci

6-Inci

4-Inci

nP

n-Pm

n-Ps

SI

SI

TTV(GBIR)

≤6 ku

≤6 ku

Bow(GF3YFCD) - Cikakken Ƙimar

≤15 μm

≤15 μm

≤25μm

≤15 μm

Warp(GF3YFER)

≤25μm

≤25μm

≤40 μm

≤25μm

LTV(SBIR) -10mmx10mm

<2μm

Wafar Edge

Beveling

SURFACI GAME

*n-Pm=n-nau'in Pm-Grade,n-Ps=n-nau'in Ps-Grade,Sl=Semi-lnsulating

Abu

8-inci

6-Inci

4-Inci

nP

n-Pm

n-Ps

SI

SI

Ƙarshen Sama

Yaren mutanen Poland na gani na gefe biyu, Si- Face CMP

SurfaceRoughness

(10um x 10um) Si-FaceRa≤0.2nm
C-Face Ra≤ 0.5nm

(5umx5um) Si-Face Ra≤0.2nm
C-Face Ra≤0.5nm

Kwakwalwa na Edge

Babu Wanda Ya Halatta (tsawo da nisa≥0.5mm)

Indents

Babu Wanda Ya Halatta

Scratches (Si-Face)

Qty.≤5, Taruwa
Length≤0.5× wafer diamita

Qty.≤5, Taruwa
Length≤0.5× wafer diamita

Qty.≤5, Taruwa
Length≤0.5× wafer diamita

Karas

Babu Wanda Ya Halatta

Ƙarƙashin Ƙarfi

3 mm

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