12 inch SOI Wafer

Takaitaccen Bayani:

Ƙware ƙirƙira kamar wanda ba a taɓa taɓa yin irinsa ba tare da na'urar zamani ta 12 Inch SOI Wafer, wani abin al'ajabi na fasaha wanda VET Energy ya kawo muku. Ƙirƙira tare da daidaito da ƙwarewa, wannan Silicon-On-Insulator wafer yana sake fasalin matsayin masana'antu, yana ba da inganci da aiki maras misaltuwa.


Cikakken Bayani

Tags samfurin

VET Energy 12-inch SOI wafer babban kayan aiki ne na ƙaramin abu, wanda aka fifita shi sosai don kyawawan kaddarorin wutar lantarki da na musamman. VET Energy yana amfani da ingantattun hanyoyin samar da wafer na SOI don tabbatar da cewa wafer yana da ƙarancin ɗigogi na yanzu, babban gudu da juriya na radiation, yana ba da ingantaccen tushe don haɗaɗɗun da'irori masu girma.

Layin samfurin VET Energy bai iyakance ga wafers na SOI ba. Har ila yau, muna samar da nau'i-nau'i na kayan haɗin gwiwar semiconductor, ciki har da Si Wafer, SiC Substrate, SiN Substrate, Epi Wafer, da dai sauransu, da kuma sababbin ƙananan bandgap semiconductor kayan kamar Gallium Oxide Ga2O3 da AlN Wafer. Waɗannan samfuran za su iya biyan buƙatun aikace-aikacen abokan ciniki daban-daban a cikin wutar lantarki, RF, firikwensin da sauran fagage.

Mayar da hankali kan nagarta, wafers ɗin mu na SOI kuma suna amfani da kayan haɓakawa kamar gallium oxide Ga2O3, cassettes da wafers na AlN don tabbatar da aminci da inganci a kowane matakin aiki. Amince da makamashi na VET don samar da sabbin hanyoyin magancewa waɗanda ke share fagen ci gaban fasaha.

Fitar da yuwuwar aikin ku tare da ingantaccen aikin VET Energy 12-inch SOI wafers. Haɓaka ƙarfin ƙirƙira ku tare da wafers waɗanda ke ɗauke da inganci, daidaito da ƙima, aza harsashin nasara a fage mai ƙarfi na fasahar semiconductor. Zaɓi Makamashi na VET don ƙimar SOI wafer mafita waɗanda suka wuce tsammanin.

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BAYANIN WAFERING

*n-Pm=n-nau'in Pm-Grade,n-Ps=n-nau'in Ps-Grade,Sl=Semi-lnsulating

Abu

8-inci

6-Inci

4-Inci

nP

n-Pm

n-Ps

SI

SI

TTV(GBIR)

≤6 ku

≤6 ku

Bow(GF3YFCD) - Cikakken Ƙimar

≤15 μm

≤15 μm

≤25μm

≤15 μm

Warp(GF3YFER)

≤25μm

≤25μm

≤40 μm

≤25μm

LTV(SBIR) -10mmx10mm

<2μm

Wafar Edge

Beveling

SURFACI GAME

*n-Pm=n-nau'in Pm-Grade,n-Ps=n-nau'in Ps-Grade,Sl=Semi-lnsulating

Abu

8-inci

6-Inci

4-Inci

nP

n-Pm

n-Ps

SI

SI

Ƙarshen Sama

Yaren mutanen Poland na gani na gefe biyu, Si- Face CMP

SurfaceRoughness

(10um x 10um) Si-FaceRa≤0.2nm
C-Face Ra≤ 0.5nm

(5umx5um) Si-Face Ra≤0.2nm
C-Face Ra≤0.5nm

Kwakwalwa na Edge

Babu Wanda Ya Halatta (tsawo da nisa≥0.5mm)

Indents

Babu Wanda Ya Halatta

Scratches (Si-Face)

Qty.≤5, Taruwa
Length≤0.5× wafer diamita

Qty.≤5, Taruwa
Length≤0.5× wafer diamita

Qty.≤5, Taruwa
Length≤0.5× wafer diamita

Karas

Babu Wanda Ya Halatta

Ƙarƙashin Ƙarfi

3 mm

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