VET Energy yana amfani da tsafta mai girman gaskesilicon carbide (SiC)kafa ta hanyar tururi jijiya(CVD)a matsayin tushen abu don girmaSiC crystalsTa hanyar sufuri na jiki (PVT). A cikin PVT, ana ɗora kayan tushen a cikin wanicruciblekuma an sanya shi a kan kristal iri.
Ana buƙatar tushen tsafta mai girma don kera inganci mai inganciSiC crystals.
Makamashi na VET ya ƙware wajen samar da babban-barbashi SiC don PVT saboda yana da girma mai yawa fiye da ƙarami-barbashi abu da aka samu ta hanyar konewar iskar Si da C mai ɗauke da iskar gas. Ba kamar m-lokaci sintering ko dauki na Si da C, shi ba ya bukatar sadaukar sintering makera ko wani lokaci sintering mataki a cikin girma tanderu. Wannan babban-barbashi abu yana da kusan yawan ƙafewar ƙura, wanda ke inganta daidaituwar gudu-zuwa-gudu.
Gabatarwa:
1. Shirya tushen tushen toshe CVD-SiC: Na farko, kuna buƙatar shirya tushen toshe CVD-SiC mai inganci, wanda yawanci shine babban tsabta da yawa. Ana iya shirya wannan ta hanyar hanyar tara tururi (CVD) ƙarƙashin yanayin da ya dace.
2. Shirye-shiryen Substrate: Zaɓi abin da ya dace a matsayin ma'auni don ci gaban SiC guda ɗaya. Abubuwan da aka saba amfani da su sun haɗa da silicon carbide, silicon nitride, da dai sauransu, waɗanda ke da kyakkyawan wasa tare da girma SiC crystal crystal.
3. Dumamawa da ƙaddamarwa: Sanya tushen tushen CVD-SiC da substrate a cikin tanderun zafin jiki mai zafi da kuma samar da yanayi mai dacewa. Sublimation yana nufin cewa a babban zafin jiki, tushen toshewa yana canzawa kai tsaye daga m zuwa yanayin tururi, sannan kuma ya sake taruwa akan saman ƙasa don samar da crystal guda ɗaya.
4. Kula da zafin jiki: A lokacin tsarin sublimation, yawan zafin jiki da kuma rarraba zafin jiki ya kamata a sarrafa shi daidai don inganta haɓakar tushen toshewa da haɓakar lu'ulu'u guda ɗaya. Madaidaicin kula da zafin jiki na iya cimma ingantacciyar ingancin crystal da ƙimar girma.
5. Kula da yanayin yanayi: A lokacin aiwatar da sublimation, yanayin halayen kuma yana buƙatar sarrafawa. Ana amfani da iskar gas mai tsafta (kamar argon) azaman iskar gas mai ɗaukar nauyi don kula da matsi mai dacewa da tsabta da kuma hana gurɓatawa ta hanyar ƙazanta.
6. Single crystal girma: The CVD-SiC block tushen sha wani tururi lokaci miƙa mulki a lokacin da sublimation tsari da recondenses a kan substrate surface don samar da guda crystal tsarin. Ana iya samun ci gaba cikin sauri na lu'ulu'u guda ɗaya na SiC ta hanyar yanayin haɓaka da ya dace da sarrafa gradient zafin jiki.
Barka da zuwa ziyarci masana'antar mu, bari mu kara tattaunawa!
